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Dolts of Polysilicon for Solar Cell Applications

Published online by Cambridge University Press:  28 February 2011

P.K. Mclarty ,
Y.I. Huang ,
D. E. Ioannou  and
S.M. Johnson
P.K. Mclarty
Affiliation:
University of Maryland, Electrical Engineering Department, College Park, Maryland 20742
Y.I. Huang
Affiliation:
University of Maryland, Electrical Engineering Department, College Park, Maryland 20742
D. E. Ioannou
Affiliation:
University of Maryland, Electrical Engineering Department, College Park, Maryland 20742
S.M. Johnson
Affiliation:
SOLAREX Corporation, Rockville, Maryland 20850
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Abstract

DLTS was applied to p—type polycrystalline silicon, grown by a casting technique to form ingots with a nominal doping level of ∼1016 acceptors/cmg. Both Schottky diodes and n+p mesa structures were used for the measurements. Very complex DLTS spectra were obtained from diodes that contained electrically active grain boundaries, whereas no traps were detected in areas that did not contain electrically active grain boundaries. Several electron and hole traps were resolved.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 71: Symposium F – Materials Issues in Silicon Integrated Circuit Processing , 1986 , 81
Copyright
Copyright © Materials Research Society 1986

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References

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