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Divinylmercury as a Precursor in the Metalorganic Molecular Beam Epitaxy of Hg Containing II-VI Materials

Published online by Cambridge University Press:  22 February 2011

J. J. Zinck  and
D. Rajavel
J. J. Zinck
Affiliation:
Hughes Research Laboratories, Malibu, California
D. Rajavel
Affiliation:
Hughes Research Laboratories, Malibu, California
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Abstract

We have used x-ray photoelectron spectroscopy, temperature programmed desorption, and epitaxial growth experiments to study the feasibility of using divinylmercury (DVHg) as a precursor for metalorganic molecular beam epitaxial (MOMBE) growth of Hg-containing II-VI materials. The surface chemistry associated with the interaction of DVHg and Te was investigated using polycrystalline Te (poly-Te) films as the substrates for DVHg adsorption. nDVHg dissociatively adsorbed on a poly-Te surface at temperatures as low as -118°C. However, the DVHg dissociation probability was temperature dependent and substantially less than unity when extrapolated to typical Hg1−xCdx Te growth temperatures of 150–200°C. Preliminary results from MOMBE growth experiments showed that successful MOMBE growth of HgTe on CdTe//ZnTe//GaAs using DVHg and thermally precracked diethyltellurium was only possible when the DVHg was also thermally precracked. Simultaneous exposure of atomic H and DVHg to a poly-Te surface significantly enhanced the dissociative adsorption of DVHg, indicating that the presence of atomic H in the growth environment may be an effective alternative to precracking DVHg for MOMBE growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 57
Copyright
Copyright © Materials Research Society 1993

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