Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-24T05:24:14.762Z Has data issue: false hasContentIssue false
  • English
  • Français

Distribution of Hydrogen- and Vacancy-Related Donor and Acceptor States in Helium-Implanted and Plasma-Hydrogenated Float-Zone Silicon

Published online by Cambridge University Press:  31 January 2011

Reinhart Job ,
Franz-Josef Niedernostheide ,
Hans-Joachim Schulze  and
Holger Schulze
Reinhart Job
Affiliation:
[email protected][email protected], University of Hagen, Mathematics and Computer Science, Hagen, Germany
Franz-Josef Niedernostheide
Affiliation:
[email protected], Infineon Technologies AG, Munich, Germany
Hans-Joachim Schulze
Affiliation:
[email protected], Infineon Technologies AG, Munich, Germany
Holger Schulze
Affiliation:
[email protected], Infineon Technologies Austria AG, Villach, Austria
Get access

Abstract

The formation and evolution of hydrogen- and vacancy-related donor and acceptor states were studied in helium-implanted and subsequently hydrogen plasma-treated n-type Float-Zone (FZ) silicon wafers by means of two-point-probe Spreading Resistance (SR) measurements. He+-implantation was executed at 3.75 MeV and 11 MeV at fluences of 1×1014 cm−2. Post-implantation 13.56-MHz RF-plasma hydrogenations were carried out at 150 W either for 15 min or 1 hour, applying substrate temperatures between 350 °C and 500 °C. Enhanced donor concentrations as well as acceptor-like states were observed in the subsurface layers of the treated FZ Si samples after 15-min post-implantation H-plasma exposures. Under appropriate process conditions, the latter ones compensated for the n-type doping, so that even buried p-type layers were created. The experimental results indicated that oxygen played a central role in the formation of the acceptor-like states.

Keywords

Siion-implantationdefects
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1195: Symposium B – Rellliability and Materials Issues of Semiconductor Optical and Electrical Devices and Materials , 2009 , 1195-B11-02
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Kozlov, A. A., Kozlovski, V. V., Semiconductors 35, 735 (2001).10.1134/1.1385708Google Scholar
2. Huang, Y. L., Simoen, E., Claeys, C., Rafi, J. M., Clauws, P., Job, R., Fahrner, W. R., Appl. Phys. Lett. 89, 031911 (2006).10.1063/1.2227076Google Scholar
3. Rafi, J. M., Simoen, E., Claeys, C., Huang, Y. L., Ulyashin, A. G., Job, R., Versluys, J., Clauws, P., Lozano, M., Campabadal, F., J. Electrochem. Soc. 152, G16 (2005).10.1149/1.1824039Google Scholar
4. Simoen, E., Claeys, C., Job, R., Ulyashin, A. G., Fahrner, W. R., Gryse, O. De, Clauws, P., Appl. Phys. Lett. 81, 1842 (2002).10.1063/1.1504487Google Scholar
5. Simoen, E., Huang, Y., Ma, Y., Lauwaert, J., Clauws, P., Rafi, J., Ulyahin, A., Claeys, C., ECS Transactions 16 (no. 6), 129 (2008).10.1149/1.2980299Google Scholar
6. Job, R., Niedernostheide, F.-J., Schulze, H.-J., Schulze, H., ECS Transactions, 16 (no. 6), 151 (2008).10.1149/1.2980300Google Scholar
7. Job, R., Niedernostheide, F.-J., Schulze, H.-J., Schulze, H., Mater. Res. Soc. Symp. Proc. 1108, 237 (2009).Google Scholar
8. Job, R., Niedernostheide, F.-J., Schulze, H.-J., Schulze, H., ECS Transactions, 25 (no. 3), 35 (2009).10.1149/1.3204392Google Scholar
9. Coutinho, J., Torres, V. J. B., Jones, R., Öberg, S., Briddon, P. R., J. Phys.: Condens. Matter 15, 2809 (2003).Google Scholar
10. Job, R., Fahrner, W. R., Ulyashin, A. G., Ivanov, A. I., Palmetshofer, L., Appl. Phys. (A) 72, 325 (2001)10.1007/s003390000622Google Scholar
11. Murray, R., Physica B 170, 115 (1991).10.1016/0921-4526(91)90112-RGoogle Scholar
12. Capaz, R. B., Assali, L. V. C., Kimmerling, L. C., Cho, K., Joannopoulos, J. D., Braz. J. Phys. 29, 611 (1999).10.1590/S0103-97331999000400002Google Scholar
13. Markevich, V. P., Murin, L. I., Lindström, J. L., Ulyashin, A. G., Job, R., Fahrner, W. R., Raiko, V., J. Phys. C: Condens. Matter 12, 10145 (2000).Google Scholar
14. Hazdra, P., Komarnitskyy, V., Mater. Sci. Engineer. B 159-160, 346 (2009).10.1016/j.mseb.2008.10.008Google Scholar
15. Alfieri, G., Monakhov, E. V., Avset, B. S., Svensson, B. G., Phys. Rev. B 68, 233202 (2003).10.1103/PhysRevB.68.233202Google Scholar