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Dissolution and Disintegration of Uniform SiO2 Layers During Direct Silicon Wafer Bonding

Published online by Cambridge University Press:  28 February 2011

Kun-Young Ahn ,
Ulrich Gösele  and
Patrick Smith
Kun-Young Ahn
Affiliation:
Department of Mechanical Engineering and Materials Science, School of Engineering, Duke University, Durham, NC 27706
Ulrich Gösele
Affiliation:
Department of Mechanical Engineering and Materials Science, School of Engineering, Duke University, Durham, NC 27706
Patrick Smith
Affiliation:
Microelectronics Center of North Carolina, Research Triangle Park, NC 27709
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Abstract

The conditions for the dissolution and disintegration of SiO2 layers between silicon wafers during direct wafer bonding are discussed in terms of two possible mechanisms. The calculated maximal thickness of a SiO2 layer which may be completely dissolved does not only depend on the bonding temperature and time but also on the starting concentration of interstitial oxygen in the silicon wafers. Finally, the influence of rotational misorientation of the two wafers on the behavior of the S1O2 layers is dealt with.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 501
Copyright
Copyright © Materials Research Society 1988

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