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Dislocation Dynamics in Semiconductor Thin Film-Substrate Systems

Published online by Cambridge University Press:  01 February 2011

E. H. Tan  and
L. Z. Sun
E. H. Tan
Affiliation:
Department of Civil and Environmental Engineering and Center for Computer-Aided Design, The University of Iowa, Iowa City, IA 52242–1527, U.S.A.
L. Z. Sun
Affiliation:
Department of Civil and Environmental Engineering and Center for Computer-Aided Design, The University of Iowa, Iowa City, IA 52242–1527, U.S.A.
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Abstract

A discrete dislocation dynamics model is developed to establish the equations of motion for three-dimensional interacting dislocation loops in the semiconductor thin film – substrate system. The film is assumed to be an elastic layer and is perfectly bonded with another elastic substrate. Dislocation loops are discretized into segments, each of which is represented by a parametric space curve of specific shape functions and associated degree of freedom. The dislocation stress field is calculated as an essential ingredient in the dislocation dynamics method. Dislocation dynamics and interaction with film surface/interface are simulated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 795: Symposium U – Thin Films - Stresses and Mechanical Properties X , 2003 , U8.9
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. Foreman, A.J.E., Phil. Mag. 15, 1011 (1967)Google Scholar
2. Devincre, B. and Condat, M., Acta Metall. Mater. 40, 2629 (1992)Google Scholar
3. Devincre, B. and Kubin, L.P., Mater. Sci. Eng. A, 80, 234 (1997)Google Scholar
4. Zbib, H.M., Rhee, M. and Hirth, J.P., Int. J. Mech. Sci. 40, 113 (1998)Google Scholar
5. Schwarz, K.W., J. Appl. Phys. 85, 108 (1999)Google Scholar
6. Ghoneim, N.M., Tong, S.-H. and Sun, L.Z., Phys. Rev. B 61, 913 (2000)Google Scholar
7. Wang, Y.U., Jin, Y.M., Cuitiño, A.M. and Khachaturyan, A.G., Acta mater. 49, 1847 (2001)Google Scholar
8. Koslowski, M., Cuitiño, A.M. and Ortiz, M., J. Mech. Phys. Solids 50, (2002)Google Scholar
9. Xiang, Y., Cheng, L.-T., Srolovitz, D.J. and Weinan, E., Acta mater. 51, 5499 (2003)Google Scholar
10. Hartmaier, A., Fivel, M.C., Canova, G.R. and Gumbsch, P., Modeling Simul. Mater. Sci. Eng. 7, 781 (1999)Google Scholar
11. Dundrus, J. and Hetenyi, M., J. Appl. Mech. 32, 671 (165)Google Scholar
12. Van der Giessenand, E., Needleman, A., Model. Simul. Mater. 3, 689 (1995)Google Scholar
13. Tan, E.H. and Sun, L.Z., To Be Submitted in Int. J. Solids Struct.Google Scholar
14. Freund, L.B., Advances in Appl. Mech. 30, 1 (1994)Google Scholar
15. Brown, L.M., Philos. Mag. 10, 441 (1964)Google Scholar
16. Lide, D.R., CRC Handbook of Chemistry and Physics, 78th Edition, CRC Press.Google Scholar