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Directional Growth of Si Nanowires on Insulating Films by Electric-Field-Assisted Metal-Induced Lateral Crystallization

Published online by Cambridge University Press:  01 February 2011

Hiroshi Kanno ,
Atsushi Kenjo ,
Taizoh Sadoh  and
Masanobu Miyao
Hiroshi Kanno
Affiliation:
[email protected], Kyushu University, Department of Electronics, 6-10-1 Hakozaki, Fukuoka, Fukuoka, 812-8581, Japan, +81-92-642-3951, +81-92-642-3974
Atsushi Kenjo
Affiliation:
[email protected], Kyushu University, Department of Electronics, Japan
Taizoh Sadoh
Affiliation:
[email protected], Kyushu University, Department of Electronics, Japan
Masanobu Miyao
Affiliation:
[email protected], Kyushu University, Department of Electronics, Japan
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Abstract

Metal-induced lateral crystallization of amorphous Si has been investigated under a wide range of electric fields (0-4000 V/cm). In the low field region (<100 V/cm), lateral growth velocity at the cathode side was enhanced by applying an electric field. This achieved formation of poly-Si with a large area (∼50 μm) during low-temperature annealing (525°C, 25 h). When the electric field exceeded 100 V/cm, the lateral growth velocity decreased with increasing the electric field strength. Under the extremely high electric field (>2000 V/cm), directional growth aligned to the electric field was observed. This new findings will be a powerful tool to achieve new poly-Si with highly controlled structures.

Keywords

crystal growthSiNi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 891: Symposium EE – Progress in Semiconductor Materials V – Novel Materials and Electronics and Optoelectronic Applications , 2005 , 0891-EE06-08
Copyright
Copyright © Materials Research Society 2006

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References

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