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Direct Wafer Bonding of Preamorphized Silicon Wafers.

Published online by Cambridge University Press:  26 February 2011

A. Laporte ,
G. Sarrabayrouse ,
M. Benamara ,
A. Claverie ,
A. Rocher ,
L. Lescouzères  and
A. PeyreLavigne
A. Laporte
Affiliation:
LAAS-CNRS, 7 Avenue du Colonel Roche, 31077 Toulouse Cedex, (France) MOTOROLA S.A, Av. Général Eisenhower, BP1029 31023 Toulouse Cedex
G. Sarrabayrouse
Affiliation:
LAAS-CNRS, 7 Avenue du Colonel Roche, 31077 Toulouse Cedex, (France)
M. Benamara
Affiliation:
CEMES/LOE-CNRS, 29 rue Jeanne Marvig 31055 Toulouse Cedex.
A. Claverie
Affiliation:
CEMES/LOE-CNRS, 29 rue Jeanne Marvig 31055 Toulouse Cedex.
A. Rocher
Affiliation:
CEMES/LOE-CNRS, 29 rue Jeanne Marvig 31055 Toulouse Cedex.
L. Lescouzères
Affiliation:
MOTOROLA S.A, Av. Général Eisenhower, BP1029 31023 Toulouse Cedex
A. PeyreLavigne
Affiliation:
MOTOROLA S.A, Av. Général Eisenhower, BP1029 31023 Toulouse Cedex
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Abstract

This paper presents the comparison of the structural and electrical characteristics of Si/Si bonded interfaces depending on whether the surface layers were rendered amorphous by high dose ion implantation prior to annealing or not. While the general structure of the interfaces is the same when the wafers are preamorphized more precipitates are seen in the interface along with a few extended defects propagating into the volume. The most striking difference between both procedures is that the Spreading Resistance profile is more complicated in shape and difficult to master in the case of preamorphized wafers. Careful TEM analysis shows that only in this case the interfacial region is stressed in contrast with the fully relaxed structure obtained by direct bonding of crystalline wafers.

For these reasons, there is little chance that the preamorphization technique will benefit to the bonding procedure of direct Si wafers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 869
Copyright
Copyright © Materials Research Society 1995

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