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Direct Synthesis of Silicon Nanowires using Silane and Molten Gallium

Published online by Cambridge University Press:  11 February 2011

Shashank Sharma ,
Mahendra K. Sunkara  and
Elizabeth C. Dickey
Shashank Sharma
Affiliation:
Department of Chemical Engineering, University of Louisville, Louisville, KY 40292, USA
Mahendra K. Sunkara*
Affiliation:
Department of Chemical Engineering, University of Louisville, Louisville, KY 40292, USA
Elizabeth C. Dickey
Affiliation:
Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802
*
[email protected]
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Abstract

We report for the first time, bulk synthesis of single crystalline silicon nanowires using molten gallium pools and an activated vapor phase containing silane. The resulting silicon nanowires were single crystalline with <100> growth direction. Nanowires contained an unexpectedly thin, non-uniform oxide sheath determined using high-resolution Transmission Electron Microscopy (TEM). Nanowires were tens of nanometers in diameter and tens to hundreds of microns long. The use of activated gas phase chemistry containing solute of interest over molten metal pools of low-solubility eutectics such as gallium offer a viable route to generate nanowire systems containing abrupt compositional hetero-interfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 737 , 2002 , F6.2
Copyright
Copyright © Materials Research Society 2003

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References

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