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Direct Growth of AIN Thin Layer on (111)Si Substrate by RF-MBE

Published online by Cambridge University Press:  10 February 2011

Naoki Ohshima ,
Hiroo Yonezu ,
Shinobu Uesugi ,
Keisuke Gotoh  and
Seiji Yamahira
Naoki Ohshima
Affiliation:
Department of Electrical and Electronic Engineering, Toyohashi University of Technology 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, 441-8580, Japan, +81-532-44-6747, +81-532-44-6757, [email protected]
Hiroo Yonezu
Affiliation:
Department of Electrical and Electronic Engineering, Toyohashi University of Technology 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, 441-8580, Japan, +81-532-44-6747, +81-532-44-6757, [email protected]
Shinobu Uesugi
Affiliation:
Department of Electrical and Electronic Engineering, Toyohashi University of Technology 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, 441-8580, Japan, +81-532-44-6747, +81-532-44-6757, [email protected]
Keisuke Gotoh
Affiliation:
Department of Electrical and Electronic Engineering, Toyohashi University of Technology 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, 441-8580, Japan, +81-532-44-6747, +81-532-44-6757, [email protected]
Seiji Yamahira
Affiliation:
Department of Electrical and Electronic Engineering, Toyohashi University of Technology 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, 441-8580, Japan, +81-532-44-6747, +81-532-44-6757, [email protected]
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Abstract

The nitridation process of (111)Si surface has been studied by in-situ reflection high-energy electron diffraction (RHEED) and Auger electron spectroscopy (AES) measurements. It has been clarified that the nitridation of the Si surface is occurred even if the shutter of the discharged rf-plasma gun is closed. The growth process of AIN epilayer on the Si substrate by migration enhanced epitaxy (MEE) has been investigated by in-situ RHEED and atomic force microscopy (AFM) observations. It has been found that the AIN epilayer is directly grown on (111)Si by MEE growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 405
Copyright
Copyright © Materials Research Society 1998

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References

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