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Direct Correlation of Transport Properties and Microstructure In Y1Ba2Cu3O7-x Thin Film Grain Boundaries*
Published online by Cambridge University Press: 15 February 2011
Abstract
Individual 45° [001] tilt grain boundaries in Y1Ba2Cu3O7-x thin films grown on biepitaxial substrates were studied. The thin films were grown using both pulsed organometallic beam epitaxy (POMBE) and laser ablation. Transport characteristics of the individual grain boundaries were measured including resistance - temperature (R-T) and current - voltage (I-V) dependencies with and without an applied magnetic field. In order to elucidate possible structural origins of the differences in transport behavior, the same grain boundaries which were electrically characterized were subsequently thinned for electron-microscopy analysis. Transmission-electron-microscopy and high-resolution-electron-microscopy were used to structurally characterize the grain boundaries. The macroscopic and microscopic structures of two boundaries, a nominally resistive and a superconducting grain boundary, are compared.
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- Copyright © Materials Research Society 1995
Footnotes
Work supported by the National Science Foundation Office of Science and Technology Centers, under contract #DMR 91-20000 (BVV, DBB) and the U.S. Department of Energy, Basic Energy Sciences-Materials Science, under contract #W-31-109-ENG-38 (KLM).
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