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Direct Bonding of Silicon Wafers with Simultaneous Dopant Diffusion

Published online by Cambridge University Press:  21 March 2011

Igor V. Grekhov ,
Tatiana S. Agrunova ,
Lioudmila S. Kostina ,
Natalia M. Shmidt ,
Helmut Föll  and
Konstantin B. Kostin
Igor V. Grekhov
Affiliation:
Solid State Electronics Division, Ioffe Physico-Technical Institute RAS, Polytekhnicheskaya ul. 26, 194021, St. Petersburg, RUSSIA
Tatiana S. Agrunova
Affiliation:
Solid State Electronics Division, Ioffe Physico-Technical Institute RAS, Polytekhnicheskaya ul. 26, 194021, St. Petersburg, RUSSIA
Lioudmila S. Kostina
Affiliation:
Solid State Electronics Division, Ioffe Physico-Technical Institute RAS, Polytekhnicheskaya ul. 26, 194021, St. Petersburg, RUSSIA
Natalia M. Shmidt
Affiliation:
Solid State Electronics Division, Ioffe Physico-Technical Institute RAS, Polytekhnicheskaya ul. 26, 194021, St. Petersburg, RUSSIA
Helmut Föll
Affiliation:
Materials Science Department, Christian-Albrechts-University of Kiel, Kaiserstr. 2, Kiel 24143, GERMANY
Konstantin B. Kostin
Affiliation:
Materials Science Department, Christian-Albrechts-University of Kiel, Kaiserstr. 2, Kiel 24143, GERMANY
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Abstract

Bonding of silicon surfaces in aqueous solution of compounds containing III and IV impurities was performed for the first time. It was observed that the presence of aluminum at the bonding interface improved structural quality of the interface. This phenomenon is explained by the increase of the contact area due to Al-OH group sandwiched between the water molecules adsorbed at hydrophilic wafer surfaces at the first bonding stage. The incorporation of Al produces a p-type layer and the I/V characteristics of the resultant np+n diodes is shown not to be influenced by the presence of the bonding interface. The technique developed could be advantageous for the design of multi-layer large area semiconductor devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 681: Symposium I – Wafer Bonding and Thinning Techniques for Materials Integration , 2001 , I5.7
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Tong, Q.-Y., Gösele, U., Semiconductor Wafer Bonding: Science and Technology, (J. Wiley&Sons, Inc., 1999) pp.49–123.Google Scholar
2. Bengtsson, S., J. of Electronic Mater. 21, 841 (1992).Google Scholar
3. Plößl, A. and Kräuter, G., Mater. Sci.&Eng. R25, 1 (1999).Google Scholar
4. Kim, E.D., Kim, N.K.. Kim, S.C., Grekhov, I.V., Argunova, T.S., Kostina, L.S., and Kudriavtseva, T.V., Electronic Letters 31, 2047 (1995).Google Scholar
5. Argunova, T.S., Vitman, R.F., Grekhov, I.V., M.Yu Gutkin, Kostina, L.S., Shturbin, A.V., Häertwig, J., Ohler, M., Kim, E.D., Kim, S.C., Solid State Physics 41, 1790 (1999).Google Scholar
6. Maszara, W.P., Jiang, B.-L., Yamada, A., Rosgonyi, G.A., Baumgart, H., and Kock, A.J.R. de, J. Appl. Phys. 69, 257 (1991).Google Scholar
7. Stengl, R., Tan, T., and Gösele, U., Jpn. J. Appl. Phys. 28, 1735 (1989).Google Scholar
8. Ohring, M., The Materials Science and Thin Films, (Acad. Press Limited, 1991) p.493.Google Scholar