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Diffusion, Precipitation, and Cavity-Wall Reactions of Ion-Implanted Gold in Silicon

Published online by Cambridge University Press:  21 February 2011

S.M. Myers  and
G.A. Petersen
S.M. Myers
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–1056
G.A. Petersen
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–1056
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Abstract

The diffusion of Au in Si and its binding to cavities and to precipitates of the equilibrium Au-Si phase were investigated in the temperature range 1023-1123 K using ion implantation and Rutherford backscattering spectrometry. The diffusivity-solubility product for interstitial Au was found to be about an order of magnitude greater than the extrapolation of previous, indirect determinations at higher temperatures. Chemisorption on cavity walls was shown to be more stable than Au-Si precipitation by 0.1-0.3 eV in the investigated temperature range, indicating that cavities are effective gettering centers for Au impurities.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 396: Symposium A – Ion-Solid Interactions for Materials Modification and Processing , 1995 , 733
Copyright
Copyright © Materials Research Society 1996

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