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Diffusion of AS, B, and P In Tasi2

Published online by Cambridge University Press:  22 February 2011

P. Eichinger ,
E. Frenzel  and
F. Neppl
P. Eichinger
Affiliation:
Fraunhofer-Institut für Festkörpertechnologie (IFT), Paul-Gerhardt-Allee 42, D-8000 München 60, FRG
E. Frenzel
Affiliation:
Fraunhofer-Institut für Festkörpertechnologie (IFT), Paul-Gerhardt-Allee 42, D-8000 München 60, FRG
F. Neppl
Affiliation:
Siemens AG, Central Research and Development, Microelectronics, Otto-Hahn-Ring 6, D-8000 Munich 83, FRG
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Abstract

Implantation range parameters and diffusion characteristics of As, B, and P in TaSi2 have been investigated, mainly by SIMS. It is shown that dopant diffusion in the silicide is much faster than in polycrystalline Si. Significant outdiffusion is observed for P, segregation effects are seen with B only. No dopant penetration through gate oxide is detected.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 165
Copyright
Copyright © Materials Research Society 1984

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References

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