Hostname: page-component-cd9895bd7-8ctnn Total loading time: 0 Render date: 2024-12-18T05:33:12.211Z Has data issue: false hasContentIssue false
  • English
  • Français

Diffusion Effect between Schottky Metals and AlGaN/GaN Heterostructure during High Temperature Annealing Process

Published online by Cambridge University Press:  31 January 2011

Young-Hwan Choi ,
Jiyong Lim ,
Young-Shil Kim  and
Min-Koo Han
Young-Hwan Choi
Affiliation:
[email protected], Seoul National University, Seoul, Korea, Republic of
Jiyong Lim
Affiliation:
[email protected], Seoul National University, Seoul, Korea, Republic of
Young-Shil Kim
Affiliation:
[email protected], Seoul National University, Seoul, Korea, Republic of
Min-Koo Han
Affiliation:
[email protected], Seoul National University, Seoul, Korea, Republic of
Get access

Abstract

We have investigated the change of the Schottky contact surface and the interface between Schottky metals and AlGaN/GaN heterostructure after the annealing process for 35 min at 300 °C. The secondary ion mass spectroscopy (SIMS) and the scanning electron microscopy (SEM) show that the Schottky metals and AlGaN/GaN heterostructure interacted actively during the annealing process. The atoms in Schottky contact and AlGaN/GaN heterostructure diffused interactively and the surface roughness of Schottky contact was increased. After the annealing process for fabricated AlGaN/GaN High-Electron-Mobility Transistor (HEMT), the threshold voltage was shifted by +0.2 V and the leakage current was decreased by 40 %.

Keywords

annealingdiffusionIII-V
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1167: Symposium O – Compound Semiconductors for Energy Applications and Environmental Sustainability , 2009 , 1167-O05-06
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Pearton, S. J. Zolper, J. C. Shul, R. J. and Ren, F. “GaN: Processing, defects, and devices”, J. Appl. Phys., vol. 86, no. 1, pp 1–78, July, 1999.Google Scholar
2 Ueda, D. Murata, T. Hikita, M. Nakazawa, S. Kuroda, M. Ishida, H. Yanagihara, M. Inoue, K. Ueda, T. Uemoto, Y. Tanaka, T. and Egawa, T. “AlGaN/GaN Devices for Future Power Switching Systems”, Int. Electron Device Meeting Tech. Dig., pp 389–392, 2005.Google Scholar
3 Hsu, J. W. P. Manfra, M. J. Molnar, R. J. Heying, B. and Speck, J. S. “Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates”, Appl. Phys. Lett., vol. 81, no. 1, pp 79–81, July, 2002.Google Scholar
4 Lee, J. Liu, D. H. Kim and Lu, W. “Postprocessing annealing effects on direct current and microwave performance of AlGaN/GaN high electron mobility transistors”, Appl. Phys. Lett., vol. 85, no. 13, pp. 2631–2633, September, 2004.Google Scholar
5 Kim, H. Schuette, M. Jung, H. Song, J. Lee, J., Lu, Wu and Mabon, J. C. “Passivation effects in Ni/AlGaN/GaN Schottky diodes by annealing”, Appl. Phys. Lett., vol. 89, no. 13, 053516, 2006 Google Scholar
6 Lee, S.C. Lim, J. Ha, M.W. Her, J.C. Yun, C.M. and Han, M.K. “High Performance AlGaNGaN HEMT Switches Employing 500oC Oxidized NiAu Gate for Very Low Leakage Current and Improvement of Uniformity”, Proc. Int. Symp. Power Semiconductor Device and ICs, 2006, pp. 247–250.Google Scholar
7 Ha, M.W. Lee, S.C. Park, J.H. Her, J.C. Seo, K.S. and Han, M.K. “Silicon Dioxide Passivation of AlGaNGaN HEMTs for High Breakdown Voltage”, Int. Symp. Power Semiconductor Device and ICs, 2006, pp. 169–172.Google Scholar
8 Green, B. M. Chu, K. K. Chumbes, E. M. Smart, J. A. Shealy, J. R. and Eastman, L. F. “The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs”, IEEE Electron Device Lett., vol. 21, no. 6, pp. 268–270, June, 2000.Google Scholar