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The Diffusion Bonding Interface Structure of Yttria Stabilized Zirconia

Published online by Cambridge University Press:  15 February 2011

Young J. Kim ,
Young Sung Yoo  and
Hwan Kim
Young J. Kim
Affiliation:
Sunmoon University, Department of Materials Science and Engineering, Asan, Chungnam 337 - 840, Korea
Young Sung Yoo
Affiliation:
Seoul National University, Department of Inorganic Materials Engineering, Seoul, 151, Korea
Hwan Kim
Affiliation:
Seoul National University, Department of Inorganic Materials Engineering, Seoul, 151, Korea
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Abstract

The specimens of Yttria Stabilized Zirconia(3Y-TZP) were bonded by a diffusion process. The microstructural evolution at the bonded interfaces was examined for the bonding conditions. We confirmed that above general sintering temperature(1500 °C), grain coarsening, which enhances the size fluctuation at the bonding interface, not only eliminates free surfaces but also is the main mechanism of bonding. In order to enhance the diffusion rate at the bonding interface, Ceria was added as a dopant, and grain boundary undulation was examined. We found that the bonding characteristics were improved by the Ceria doping. Specimens with an undulating bonded interface exhibited transgranular fracture, while specimens with a straight interface showed intergranular fracture. The undulation at the bonded interface is suggested to improve ceramic to ceramic bonding.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 357: Symposium C – Structure and Properties of Interfaces in Ceramics , 1994 , 151
Copyright
Copyright © Materials Research Society 1995

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