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Diffusion Behavior of B-, As- and Sb-Dopants in Thin Epitaxial Layers

Published online by Cambridge University Press:  28 February 2011

W.H. Krautschneider ,
F. Lau ,
H. Gossner  and
H. Schaefer
W.H. Krautschneider
Affiliation:
Siemens AG, Corp. Res., Munich, Germany
F. Lau
Affiliation:
Siemens AG, Corp. Res., Munich, Germany
H. Gossner
Affiliation:
Universitaet der Bundeswehr Muenchen, Munich, Germany
H. Schaefer
Affiliation:
Siemens AG, Corp. Res., Munich, Germany
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Abstract

Advanced CVD- and MBE-epitaxy allows processing of very thin epitaxial layers with extremely steep dopant gradients. As steep dopant profiles are very sensitive to temperature treatments, the impact of thermal processing from 800°C to 1000°C on the dopant redistribution in epitaxial layers was investigated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 945
Copyright
Copyright © Materials Research Society 1995

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References

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