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Diffusion Barrier Characteristics of Zirconium Diboride Films Grown by Remote Plasma CVD

Published online by Cambridge University Press:  10 February 2011

J. Sung ,
D. M. Goedde ,
G. S. Girolami  and
J. R. Abelson
J. Sung
Affiliation:
Department of Materials Science and Engineering, University of Illinois at Urbana Champaign,Urbana IL 61801
D. M. Goedde
Affiliation:
Department of Chemistry, University of Illinois at Urbana Champaign, Urbana IL 61801
G. S. Girolami
Affiliation:
Department of Chemistry, University of Illinois at Urbana Champaign, Urbana IL 61801
J. R. Abelson
Affiliation:
Department of Materials Science and Engineering, University of Illinois at Urbana Champaign,Urbana IL 61801
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Abstract

Low resistivity and fully conformal ZrB2 thin films are deposited by remote plasma chemical vapor deposition using zirconium tetrahydroborate, Zr(BH4)4. The problems with thermal CVD using this precursor – excess B incorporation, oxygen contamination, and high resistivity – are eliminated by injecting atomic hydrogen from a remote microwave plasma source onto the substrate. Using this technique, the films are stoichiometric, have ∼ 40 μΩ-cm resistivity, < 4 at.% oxygen contamination, and are fully conformal in deep trenches and vias. We show that a 50 nm thick ZrB2 film on c-Si (100) prevents Cu in-diffusion after 1 hour annealing at 650°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 563: Symposium M – Materials Reliability in Microelectronics IX , 1999 , 39
Copyright
Copyright © Materials Research Society 1999

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