Hostname: page-component-669899f699-b58lm Total loading time: 0 Render date: 2025-05-07T03:53:58.803Z Has data issue: false hasContentIssue false
  • English
  • Français

Diffusion and Defect Structure in Nitrogen Implanted Silicon

Published online by Cambridge University Press:  21 March 2011

Omer Dokumaci ,
Richard Kaplan ,
Mukesh Khare ,
Paul Ronsheim ,
Jay Burnham ,
Anthony Domenicucci ,
Jinghong Li ,
Robert Fleming ,
Lahir S. Adam  and
Mark E. Law
Omer Dokumaci
Affiliation:
IBM SRDC, Hopewell Junction, NY 12533
Richard Kaplan
Affiliation:
IBM SRDC, Hopewell Junction, NY 12533
Mukesh Khare
Affiliation:
IBM SRDC, Hopewell Junction, NY 12533
Paul Ronsheim
Affiliation:
IBM SRDC, Hopewell Junction, NY 12533
Jay Burnham
Affiliation:
IBM Microelectronics, Burlington, VT
Anthony Domenicucci
Affiliation:
IBM SRDC, Hopewell Junction, NY 12533
Jinghong Li
Affiliation:
IBM SRDC, Hopewell Junction, NY 12533
Robert Fleming
Affiliation:
IBM SRDC, Hopewell Junction, NY 12533
Lahir S. Adam
Affiliation:
Electrical Engineering Dept., University of Florida, Gainesville, FL 32611
Mark E. Law
Affiliation:
Electrical Engineering Dept., University of Florida, Gainesville, FL 32611
Get access

Abstract

Nitrogen diffusion and defect structure were investigated after medium to high dose nitrogen implantation and anneal. 11 keV N2+ was implanted into silicon at doses ranging from 2×1014 to 2×1015 cm−2. The samples were annealed with an RTA system from 750°C to 900°C in a nitrogen atmosphere or at 1000°C in an oxidizing ambient. Nitrogen profiles were obtained by SIMS, and cross-section TEM was done on selected samples. TOF-SIMS was carried out in the oxidized samples. For lower doses, most of the nitrogen diffuses out of silicon into the silicon/oxide interface as expected. For the highest dose, a significant portion of the nitrogen still remains in silicon even after the highest thermal budget. This is attributed to the finite capacity of the silicon/oxide interface to trap nitrogen. When the interface gets saturated by nitrogen atoms, nitrogen in silicon can not escape into the interface. Implant doses above 7×1014 create continuous amorphous layers from the surface. For the 2×1015 case, there is residual amorphous silicon at the surface even after a 750°C 2 min anneal. After the 900°C 2 min anneal, the silicon fully recrystallizes leaving behind stacking faults at the surface and residual end of range damage.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 669: Symposium J – Si Front-End Processing–Physics and Technology of Dopant-Defect Interactions III , 2001 , J6.4
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Liu, C.T., Ma, Y., Becerro, J., Nakahara, S., Eaglesham, D.J., and Hillenius, S. J., IEEE Electron Device Lett. 18, 105 (1997).Google Scholar
2. Liu, C.T., Ma, Y., Oh, M., Diodato, P.W., Stiles, K.R., McMacken, J.R., Li, F., Chang, C.P., Cheung, K.P., Colonell, J.I., Lai, W.Y.C., Liu, R., Lloyd, E.J., Miner, J.F., Pai, C.S., Vaidya, H., Frackoviak, J., Timko, A., Klemens, F., Maynard, H., and Clemens, J.T., IEDM Tech. Dig., 589 (1998).Google Scholar
3. Liu, C.T., Ma, Y., Luftman, H., and Hillenius, S.J., IEEE Electron Device Lett. 18, 212 (1997).Google Scholar
4. Adam, L.S., Law, M.E., Jones, K.S., Dokumaci, O., Murthy, C.S., and Hegde, S., J. Appl. Phys. 87, 2282 (2000).Google Scholar
5. Adam, L.S., Law, M.E., Dokumaci, O., and Hegde, S., IEDM Tech. Dig., (2000).Google Scholar
6. Dokumaci, O., Ronsheim, P., Hegde, S., Chidambarrao, D., Adam, L.S., and Law, M.E., Mat. Res. Soc. Symp. Vol. 610, B.5.9.1 (2000).Google Scholar
7. Murakami, T., Kuroi, T., Kawasaki, Y., Inuishi, M., Matsui, Y., and Yasuoka, A., Nucl. Instr. and Meth. in Phys. Res. B 121, 257 (1997).Google Scholar
8. Hakayama, S., and Sakai, T., J. Electrochem. Soc. 144, 4326 (1997).Google Scholar
9. Olson, G.L., and Roth, J.A., Mater. Sci. Rep. 3, 1 (1988).Google Scholar
10. Kennedy, E.F., Csepregi, L., Mayer, J.W., and Sigmon, T.W., J. Appl. Phys. 48, 4241 (1977).Google Scholar
11. Carter, C., Maszara, W., Sadana, D.K., Rozgonyi, G.A., Liu, J., and Wortman, J., Appl. Phys. Lett. 44, 459 (1984).Google Scholar