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Diethylsilane as a Silicon Source for the Deposition of Silicon Nitride and Silicon Oxynitride Films by LPCVD

Published online by Cambridge University Press:  25 February 2011

Arthur K. Hochberg  and
David L. O'Meara
Arthur K. Hochberg
Affiliation:
Schumacher., Carlsbad, CA
David L. O'Meara
Affiliation:
Hughes Technology Center, Carlsbad, CA
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Abstract

A purified diethylsilane (DES), LTO-410TM, has been studied as a silicon precursor for the deposition of silicon nitride and silicon oxynitride films by LPCVD. In the temperature range from 650 to 725°C mixtures of DES and NH3 produce uniform, oxidation resistant silicon nitride layers. Auger and RBS analyses show that the carbon concentrations in the films are correlated with the DES partial pressures. The film refractive indices also correlate with the carbon levels in the films for a fixed deposition temperature. Mixtures of DES, NH3, and N2O deposit silicon oxynitride films in the temperature range from 650 to 700°C with compositions controlled by the NH3:N2O ratio for a fixed DES flow. These films have carbon levels below the minimum detectable limit of Auger and RBS analyses.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 204: Symposium E – Chemical Perspectives of Microelectronic Materials II , 1990 , 509
Copyright
Copyright © Materials Research Society 1991

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References

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