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Dielectric Properties of Ultra Dense (3 g/cm3) Silicon Nitride Deposited by Hot Wire CVD at Industrially Relevant High Deposition Rates

Published online by Cambridge University Press:  01 February 2011

Zomer Silvester Houweling ,
Vasco Verlaan ,
Karine van der Werf ,
Hanno D. Goldbach  and
Ruud E I Schropp
Zomer Silvester Houweling
Affiliation:
[email protected], Utrecht University, Surfaces, Interfaces and Devices, Van Humboldtstraat 44, Utrecht, 3514 GR, Netherlands, 0031302533161, 0031302543165
Vasco Verlaan
Affiliation:
[email protected], Utrecht University, Surfaces, Interfaces and Devices, Princetonplein 5, PO box 80.000, Utrecht, NL-3508 TA, Netherlands
Karine van der Werf
Affiliation:
[email protected], Utrecht University, Surfaces, Interfaces and Devices, Princetonplein 5, PO box 80.000, Utrecht, NL-3508 TA, Netherlands
Hanno D. Goldbach
Affiliation:
[email protected], Utrecht University, Surfaces, Interfaces and Devices, Princetonplein 5, PO box 80.000, Utrecht, NL-3508 TA, Netherlands
Ruud E I Schropp
Affiliation:
[email protected], Utrecht University, Surfaces, Interfaces and Devices, Princetonplein 5, PO box 80.000, Utrecht, NL-3508 TA, Netherlands
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Abstract

For silicon nitride (SiNx) deposited at 3 nm/s using hot wire chemical vapor deposition (HWCVD), the mass-density reached an ultra high value of 3.0 g/cm3. Etch rates in a 16BHF solution show that the lowest etch rate occurs for films with a N/Si ratio of 1.2, the ratio where also the maximum in mass density occurs. The thus found etch rate of 7 nm/min is much better than that for PECVD layers, even when made at a much lower deposition rate. The root-mean-square (rms) roughness measured on 300 nm thick SiN1.2 layers is only about 1 nm, which is advantageous for obtaining high field-effect mobility in thin-film transistors. SiN1.2 films have succesfully been tested in “all hot wire” thin film transistors (TFTs). SiNx films with various x values in the range 1.0 < × <1.5 have been incorporated in metal-insulator-semiconductor structures with n-type c-Si wafers to determine their electrical properties from C-V and I-V measurements. We analyzed the behavior of the static dielectric constant, fixed nitride charges and trapped nitride charges as function of N/Si ratio. I-V measurements show that the HW SiNx films with N/Si ≥ 1.33 have high dielectric breakdown fields that exceed 5.9 MV/cm. For these films we deduce a low positive fixed nitride charge density of 6.2-7.8 × 1016 cm-3 from the flat band voltage and from the small hysteresis in the backward sweep we deduce a low fast trapped charge density of 1.3-1.7 × 1011 cm-2. The dielectric constant ε for different compositions is seen not to change appreciably over the whole range and amounts to 6.3 ± 0.1. These high-density SiNx films possess very low tensile stress (down to 16 MPa), which will be helpful in for instance, plastic electronics applications. HWCVD provides high quality a-SiNx materials with good dielectric properties at a high deposition rate.

Keywords

nitridechemical vapor deposition (CVD) (deposition)dielectric properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 989: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2007 , 2007 , 0989-A04-05
Copyright
Copyright © Materials Research Society 2007

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References

[1] Soppe, W., Rieffe, H., and Weeber, A.W.. Prog. Photovolt: res. appl. 13 (2005) 551 Google Scholar
[2] Dekker, H.F.W., Carnel, L., and Beaucarne, G.. Appl.Phys. Lett. 89 (2006) 013508 Google Scholar
[3] Hoex, B.. Erven, A.J.M. van, Bosch, R.V.M., Stals, W.T.M., Bijker, M.D., Oever, P.J. van den, Kessels, W.M.M. and Sanden, M.C.M. van de Prog. Photovolt: res. appl. 13 (2005) 705 Google Scholar
[4] Sobrinho, A. S. da Silva, Czeremuszkin, G., Latre`che, M., and Wertheimer, M. R.. J. Vac. Sci. &Techn. 18,1 (2000) 149–157 Google Scholar
[5] Lin, Y., , C, Chen, , Shieh, J., Lee, Y., Pan, C., Chen, C., Peng, J., and Chao, C.. Appl. Phys. Lett. 88(2006) 233511.Google Scholar
[6] Hatzopoulos, A. T., Arpatzanis, N., Tassis, D.H. and Dimitriadis, C.A., Templier, F., and Kamarinos, G.. J. Appl. Phys. 100 (2006) 114311 Google Scholar
[7] Ansari, S.G., Umemoto, H., Morimoto, T., Yoneyame, K., Izumi, A., Masuda, A., Matsumura, H. Thin solid films 501(2006) 31 Google Scholar
[8] Verlaan, V., Houweling, Z.S., Werf, C.H.M. van der, Goldbach, H.D., and Schropp, R. E. I.. MRS Proc. 910 (2006) A3.3.Google Scholar
[9] Schropp, R.E.I.. Jpn. J. Appl. Phys. 45 (2006) 4309 Google Scholar
[10] Verlaan, V., Werf, C.H.M. van der, Arnoldbik, W.M., Goldbach, H.D., Schropp, R.E.I..Phys. Rev. B 73(2006) 195333.Google Scholar
[11] Akasaka, Y., Ext. Abstr. of the 4th Conf. on Hot-Wire CVD Process, Takayama, Jap., (2006)Google Scholar
[12] Verlaan, V., Werf, C.H.M. van der, Houweling, Z.S., Dekkers, H. F. W., Romijn, I. G., Weeber, A. W., Goldbach, H. D., and Schropp, R. E. I.. Prog. In Photovolt. In Press.DOI: 10.1002/pip.760Google Scholar
[13] Claassen, W. A. P., Valkenburg, W. G. J. M., Wijgert, W. M. v. d. and Willemsen, M. F. C., Thin Solid Films 129, 3–4 (1985) 239–247 Google Scholar
[14] Masuda, A., Totsuka, M., Oku, T., Hattori, R., a. Vacuum 74 (2004) 525 Google Scholar
[15] Takano, M., Niki, T., Heya, A., Osono, T., Yonezawa, Y., Minamikawa, T., Muroi, S., Minami, S., Masuda, A., Umemoto, H., and Matsumura, H.. Jpn. J. Appl. Phys. 44, 6A (2005) 4098–4102.Google Scholar
[16] Schropp, R.E.I., Feenstra, K.F., Molenbroek, E.C., Meiling, H., and Rath, J.K., Philos. Mag B 76, (1997),309.Google Scholar
[17] Tolmlin, S.G., J. Phys. D5(1972) 847 Google Scholar
[18] Hishikawa, Y., Nakamura, N. and Kuwano, Y.. Jpn. J. Appl. Phys. 30 (1991) 1008 Google Scholar
[19] Bik, W.M. Arnold and Habraken, F.H.P.M.. Rep. Prog. Phys. 56 (1993) 859 Google Scholar
[20] Gordon, B.J., C-V plotting: Myths and Methods, Sol. State Techn. (1993)Google Scholar
[21] Dubey, P.K., Filikov, V.A. and Simmons, J.G.. Thin Solid Films 33 (1976) 49–63 Google Scholar
[22] Sze, S.M., Physics of Semiconductor Devices, Wiley, London, (1969) 425–504.Google Scholar
[23] Glang, R., Holmwood, R.A., and Rosenfeld, R. L., Rev. Sci. Instr. 36,7 (1965).Google Scholar
[24] Wehrspohn, R.B., Deane, S.C., French, I.D., Gale, I., Hewett, J., Powell, M. J., and Robertson, J., J. Appl.Phys. 87,144 (2000).Google Scholar
[25] Stannowski, B., Silicon-based thin-film transistors with a high stability, Ph.D. thesis, Universiteit Utrecht, (2002)Google Scholar
[26] Guo, R., Kurata, Y., Inokuma, T., and Hasegawa, S.. J. of non-Cryst.Sol. 351 (2005) 3006 Google Scholar
[27] Han, G.C., Luo, P., Li, K. B., Liu, Z.Y., and Wu, Y.H.. Appl. Phys. A.74 (2002) 243 Google Scholar
[28] Smith, D. L., Alimonda, A. S., Chen, C.-C., Ready, S. E. and Wacker, B.: J. Electrochem. Soc. 137(1990) 614.Google Scholar
[29] Schropp, R.E.I., Nishizaki, S., Houweling, Z.S., Verlaan, V., Werf, C.H.M van der, Matsumura, H..Submitted to solid state electronics. Google Scholar
[30] Muller, R.S. and Kamins, T.I., Device electronics for Integrated Circuits 3rd ed. 145–148 Google Scholar
[31] Sazonov, A., Stryahilev, D., Nathan, A., Bogomolova, L. D., J. Non-Cryst. Sol., 299—302 (2002)1360—1364 Google Scholar
[32] Quinn, L.J., Mitchell, S.J.N., Armstrong, B.M., Gamble, H.S., J. Non-Cryst. Sol., 187 (1995) 347–352 Google Scholar
[33] Stannowski, B., Rath, J. K. and Schropp, R. E. I., Thin Solid Films 395 (2001) 339–342.Google Scholar
[34] al, F. Liu et. J. Appl. Phys. 96,5 (2004) 2973 Google Scholar