Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-24T15:30:50.390Z Has data issue: false hasContentIssue false

Dielectric Properties of Cr2O3 Doped (Ba,Sr,Ca)TiO3 Ceramics for Tunable Microwave Devices

Published online by Cambridge University Press:  26 February 2011

Bing Qin
Affiliation:
[email protected], Shanghai University, Materials Science and Engineering, NO.149 Yanchang Rd, Shanghai, 200072, China, People's Republic of, +862156338852
Dengren Jin
Affiliation:
[email protected], Shanghai University, School of Materials Science and Engineering, No.149 Yanchang Rd., Shanghai, 200072, China, People's Republic of
Jinrong Chen
Affiliation:
[email protected], Shanghai University, School of Materials Science and Engineering, No.149 Yanchang Rd., Shanghai, 200072, China, People's Republic of
Zhongyan Meng
Affiliation:
[email protected], Shanghai University, School of Materials Science and Engineering, No.149 Yanchang Rd., Shanghai, 200072, China, People's Republic of
Get access

Abstract

Cr2O3-doped (Ba0.55Sr0.4Ca0.05)TiO3 ceramics were fabricated by the mixed-oxide method. Their dielectric properties were investigated with the variation of Cr3+ doping concentrations (0∼2.0mol%). All the BSCT specimens owned dense and homogeneous structure. Doping of Cr3+ could reduce the Curie temperature and their dielectric constant peak values, and improve the thermal stabilities of their dielectric properties. Both the dielectric constant and dielectric loss of the BSCT ceramics were reduced by doping Cr ions when the dopant concentration was lower than 1.5mol%. 1.0mol% Cr-doped BSCT specimens are expected to be the candidate materials for microwave tunable devices, whose tunability, dielectric constant and loss were 16.1%, 2700 and 0.24% respectively.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Tagantsev, A.K., Sherman, V.O., Astafiev, K.F., Venkatesh, J., Setter, N., J. Electroceram. 11, 5 (2003)Google Scholar
2. Sengupta, L.C., Sengupta, S., IEEE Trans. Ultrason. Ferroelectr. 44, 792 (1997)Google Scholar
3. Romanofsky, R.R., Bernhard, J.T., Keuls, F.W. Van, Miranda, F.A., IEEE Trans. Microwave Theor. 48, 2504 (2000)Google Scholar
4. Galt, D., Price, J.C., Beall, J.A., Ono, R/H., Appl. Phys. Lett. 63, 3078 (1993)Google Scholar
5. Herner, S.B., Selmi, F.A., Varadan, V.V., Varadan, V.K., Mater. Lett. 15, 317 (1993)Google Scholar
6. Liang, Xiaofeng, wu, Wenbiao, Meng, Zhongyan, J. A. Ceram. Soc. 87, 2218 (2004)Google Scholar
7. Lee, Sung Gap, J. Korean Phys. Soc. 44, 393 (2004)Google Scholar
8. Tang, X.G., Wangb, X.X., Chewb, K.-H., Chan, H.L.W., Solid State Commun. 136, 89 (2005)Google Scholar
9. Feteira, Antonio, Sinclair, Derek C., Reaney, Ian M., J. Am. Ceram. Soc. 87,1082 (2004)Google Scholar
10. Zimmermann, F., Voigts, M., Menesklou, , Ivers-Tiffe, E., J. Eur Ceram Soc. 24, 1729 (2004)Google Scholar
11. Lee, Sung-Gap, Kang, Dae-Seok. Mater. Lett. 57, 1629 (2003)Google Scholar
12. Lee, Sung-Gap, Kim, Chang-Il, Kim, Byung-Chul J. Euro. Ceram. Soc. 24, 157 (2004)Google Scholar
13. Mitsui, T., Nomura, S., “Numerical Data and Functional Relationships in Science and Technology”, Ed. By Springer-Verlag, New York, 16, 470 (1981)Google Scholar
14. Qin, Bing, Jin, Dengren, Cheng, Jinrong and Meng, Zhongyan, “the Proceeding of the 15th International Symposium on the Application of Ferroelectrics” (accepted), North Carolina, 2006 Google Scholar
15. Liang, X. F., Meng, Z.Y., Wu, W. B., Mater. Sci. Eng. B 99,366 (2003)Google Scholar
16. Liang, Rui-Hong, Dong, Xian-Lin, Chen, Ying, Ceramics International. 31, 1097 (2005)Google Scholar
17. Ravez, J., Acad, C.R.. Sci. Paris, Serie IIc, Chimie. 3, 267 (2000)Google Scholar
18. Li, Ruxing., Cheng, Jinrong, Meng, Zhongyan, J. Mater. Sci: Mater. Electron. 17, 587 (2006)Google Scholar
19. Johnson, K.M, J. Appl. Phys. 33, 2826 (1962)Google Scholar
20. Diamond, H., J. Appl. Phys. 32, 909 (1961)Google Scholar