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Dielectric Function and Band Gaps of Si1−xCx AND Si0.924−xGe0.076Cx (0≤x≤0.014) Semiconductor Alloys Grown on Si

Published online by Cambridge University Press:  15 February 2011

Hosun Lee ,
J.A. Floro ,
J. Strane ,
S. R. Lee ,
E. D. Jones ,
T. Mayer  and
S. T. Picraux
Hosun Lee
Affiliation:
Sandia National Laboratories, P. O. Box 5800, Albuquerque, NM 87185-0601
J.A. Floro
Affiliation:
Sandia National Laboratories, P. O. Box 5800, Albuquerque, NM 87185-0601
J. Strane
Affiliation:
Sandia National Laboratories, P. O. Box 5800, Albuquerque, NM 87185-0601
S. R. Lee
Affiliation:
Sandia National Laboratories, P. O. Box 5800, Albuquerque, NM 87185-0601
E. D. Jones
Affiliation:
Sandia National Laboratories, P. O. Box 5800, Albuquerque, NM 87185-0601
T. Mayer
Affiliation:
Sandia National Laboratories, P. O. Box 5800, Albuquerque, NM 87185-0601
S. T. Picraux
Affiliation:
Sandia National Laboratories, P. O. Box 5800, Albuquerque, NM 87185-0601
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Abstract

We have characterized the optical properties of heteroepitexial Si1−xCx and Si0.924−xGe0.076Cx (0≤x≤0.014) alloys grown on Si substrates by solid phase epitaxy using spectroscopic ellipsometry. The measured dielectric function confirms that the samples are of good crystalline quality. We determined the E1 and E2 band gaps by lineshape-fitting the features in the second derivative spectra of the dielectric functions. Also, we discuss the shift of the band gaps with C concentration arising from strain and chemical alloying.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 379: Symposium C – Strained Layer Epitaxy–Materials, Processing, and Devise Applications , 1995 , 211
Copyright
Copyright © Materials Research Society 1995

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References

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