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Diamond Heteroepitaxial Lateral Overgrowth

Published online by Cambridge University Press:  24 February 2015

Y-H Tang
Affiliation:
Department of Physics and Astronomy, Michigan State University, East Lansing, MI 48824-2320, U.S.A.
B. Bi
Affiliation:
Department of Physics and Astronomy, Michigan State University, East Lansing, MI 48824-2320, U.S.A.
B. Golding
Affiliation:
Department of Physics and Astronomy, Michigan State University, East Lansing, MI 48824-2320, U.S.A.
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Abstract

A method of diamond heteroepitaxial lateral overgrowth is demonstrated which utilizes a photolithographic metal mask to pattern a thin (001) epitaxial diamond surface. Significant structural improvement was found, with a threading dislocation density reduced by two orders of magnitude at the top surface of a thick overgrown diamond layer. In the initial stage of overgrowth, a reduction of diamond Raman linewidth in the overgrown area was also realized. Thermally-induced stress and internal stress were determined by Raman spectroscopy of adhering and delaminated diamond films. The internal stress is found to decrease as sample thickness increases.

Type
Articles
Copyright
Copyright © Materials Research Society 2015 

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References

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