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Development of Improved Precursors for the MOCVD of Bismuth Titanate

Published online by Cambridge University Press:  11 February 2011

Paul A. Williams ,
Anthony C. Jones ,
Neil L. Tobin ,
Paul A. Marshall ,
Paul R. Chalker ,
Hywel O. Davies  and
Lesley M. Smith
Paul A. Williams
Affiliation:
Epichem Limited, Power Road, Bromborough, Wirral, Merseyside, CH62 3QF, UK
Anthony C. Jones
Affiliation:
Epichem Limited, Power Road, Bromborough, Wirral, Merseyside, CH62 3QF, UK Department of Chemistry and Surface Science Research Centre, University of Liverpool, Liverpool, L69 7ZD, UK
Neil L. Tobin
Affiliation:
Department of Chemistry and Surface Science Research Centre, University of Liverpool, Liverpool, L69 7ZD, UK
Paul A. Marshall
Affiliation:
Department of Materials Science and Engineering, University of Liverpool, Liverpool, L69 3BX, UK
Paul R. Chalker
Affiliation:
Department of Materials Science and Engineering, University of Liverpool, Liverpool, L69 3BX, UK
Hywel O. Davies
Affiliation:
Epichem Limited, Power Road, Bromborough, Wirral, Merseyside, CH62 3QF, UK
Lesley M. Smith
Affiliation:
Epichem Limited, Power Road, Bromborough, Wirral, Merseyside, CH62 3QF, UK
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Abstract

Bismuth titanate thin films have been grown by liquid injection MOCVD using Bi(mmp)3 in combination with the new Ti precursors Ti(OPri)2(mmp)2 and Ti(mmp)4 (mmp = OCMe2CH2OMe). Films were grown on Si(100) substrates over the temperature range 300 – 600°C, and were shown to consist predominantly of the Bi4Ti3O12 phase at substrate temperatures > 500°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 748: Symposium U – Ferroelectric Thin Films XI , 2002 , U12.3
Copyright
Copyright © Materials Research Society 2003

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References

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