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Development of Epitaxial, Tiling, and Cutting Processes for a Diamond Single Crystal Wafer Technology

Published online by Cambridge University Press:  10 February 2011

J. B. Posthill ,
D. P. Malta ,
T. P. Humphreys ,
G. C. Hudson ,
R. E. Thomas ,
R. A. Rudder  and
R. J. Markunas
J. B. Posthill
Affiliation:
Research Triangle Institute, Research Triangle Park, North Carolina 27709-2194
D. P. Malta
Affiliation:
Research Triangle Institute, Research Triangle Park, North Carolina 27709-2194
T. P. Humphreys
Affiliation:
Research Triangle Institute, Research Triangle Park, North Carolina 27709-2194
G. C. Hudson
Affiliation:
Research Triangle Institute, Research Triangle Park, North Carolina 27709-2194
R. E. Thomas
Affiliation:
Research Triangle Institute, Research Triangle Park, North Carolina 27709-2194
R. A. Rudder
Affiliation:
Research Triangle Institute, Research Triangle Park, North Carolina 27709-2194
R. J. Markunas
Affiliation:
Research Triangle Institute, Research Triangle Park, North Carolina 27709-2194
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Abstract

Development of a diamond homoepitaxial deposition process that utilizes water and-ethanol at a growth temperature of ∼600°C is described. Topographies are excellent, and etch-pit densities (EPD) are in the 106 cm-2 range when growth is done on type Ia C(100) substrates.-This process has been used to epitaxially join diamond single crystals that were bonded in close-proximity to each other. This process of “tiling” single crystal diamonds in close proximity in-order to manufacture a large-area diamond single crystal template is also described. Specially-prepared diamonds that have had their faces and edges oriented to { 100} were coated with-heteroepitaxial Ni, then pressed onto a Si wafer while being heated in an inert gas atmosphere.-The resulting bond is excellent; thereby permitting our 600°C diamond deposition process to-epitaxially join the diamonds. A diamond wafer cutting technology has been addressed using a-specific sequence consisting of: ion implantation, homoepitaxial diamond growth, annealing, and-contactless electrochemical etching. This “lift-off” method of cutting has thus far resulted in a 2mm×O.5mm×17.5μm transparent, synthetic, free-standing, single crystal diamond plate being-fabricated. Raman spectroscopy and EPD show the plate to be comparable to our best-homoepitaxial diamond.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 416: Symposium DD – Diamond for Electronic Applications , 1995 , 45
Copyright
Copyright © Materials Research Society 1996

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References

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