Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-28T04:03:31.897Z Has data issue: false hasContentIssue false
  • English
  • Français

Development of a-SiOx:H/a-Si1-xGex:H Tandem Solar Cell for Triple-Junction Solar Cell Applications

Published online by Cambridge University Press:  09 August 2012

Y.W. Tseng ,
Y.H. Lin ,
H.J. Hsu ,
C.H. Hsu  and
C.C. Tsai
Y.W. Tseng
Affiliation:
Dept. of Photonics, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan
Y.H. Lin
Affiliation:
Dept. of Photonics, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan
H.J. Hsu*
Affiliation:
Dept. of Photonics, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan
C.H. Hsu
Affiliation:
Dept. of Photonics, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan
C.C. Tsai
Affiliation:
Dept. of Photonics, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan
*
*Email: [email protected]
Get access

Abstract

In this work, the development of hydrogenated amorphous silicon oxide (a-SiOx:H) absorber, a-SiOx:H single-junction solar cells and a-SiOx:H/a-Si1-xGex:H tandem solar cells were presented. The oxygen content of the a-SiOx:H materials controlled by changing CO2-to-SiH4 flow ratio had significant influence on its opto-electrical property. As CO2/SiH4 increased from 0 to 2, the bandgap increased from 1.75 to 2.13 eV while the photo-conductivity decreased from 8.25×10-6 to 1.02×10-8 S/cm. Photo-response of over 105 can be obtained as the bandgap was approximately 1.90 eV. The performance of single-junction solar cells revealed a better efficiency can be obtained as the absorber bandgap was in the range of 1.83 to 1.90 eV. Further increase of the absorber bandgap may lead to the increase in bulk defect density which deteriorated the cell efficiency. Finally, a-SiOx:H/a-Si1-xGex:H tandem solar cell was fabricated with the absorber bandgap of 1.90 eV in the top cell. By matching the current between the component cells, the tandem cell efficiency of 7.38% has been achieved.

Keywords

amorphousphotovoltaicplasma-enhanced CVD (PECVD) (deposition)
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1426: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology—2012 , 2012 , pp. 125 - 130
Copyright
Copyright © Materials Research Society 2012

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Yan, B., Yue, G., Sivec, L., Yang, J., Guha, S., and Jiang, C.S., Appl. Phys. Lett. 99 (2011) 113512.CrossRefGoogle Scholar
Yunaz, I.A., Yamada, A., and Konagai, M., Jap. J. Appl. Phys. 5 (2007) 4.Google Scholar
Haga, K., Yamamoto, K., Kumano, M., and Watanabe, H., Jap. J. Appl. Phys. 25 (1986) L39.CrossRefGoogle Scholar
Das, D., Iftiquar, S., and Barua, A., J. Non-Cryst. Solids, 210 (1997) 148.CrossRefGoogle Scholar
Iftiquar, S., J. Phys. D: Appl. Phys. 31 (1998) 1630.CrossRefGoogle Scholar
Hsu, H., Wang, C., Hsu, C., and Tsai, C., Mat. Res. Soc. Symp. Proc. 1321 (2011) 15.Google Scholar
Tauc, J., Mat. Res. Bull. 3 (1968) 37.CrossRefGoogle Scholar
Singh, A. and Davis, E., J. Non-Cryst. Solids, 122 (1990) 223.CrossRefGoogle Scholar
Umezu, I., Miyamoto, K., Sakamoto, N., and Maeda, K., Jpn. J. Appl. Phys. 34 (1995) 1753.CrossRefGoogle Scholar
Lucovsky, G., Solid State Commun. 29 (1979) 571.CrossRefGoogle Scholar
Inthisang, S., Sriprapha, K., Yamada, A., and Konagai, M., Proc. of 33rd IEEE PVSC (2008) 1.Google Scholar
Das, D. and Barua, A., Sol. En. Mat. Sol. Cells. 60 (2000) 167.CrossRefGoogle Scholar