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Development of Aluminum Nitride/Platinum Stack Structures for an Enhanced Piezoelectric Response

Published online by Cambridge University Press:  01 February 2011

Adam Kabulski ,
John Harman ,
Parviz Famouri  and
Dimitris Korakakis
Adam Kabulski
Affiliation:
[email protected], West Virginia University, Lane Department of Computer Science and Electrical Engineering, 1120 Windsor Ave, Morgantown, WV, 26505, United States
John Harman
Affiliation:
[email protected], West Virginia University, Lane Department of Computer Science and Electrical Engineering, Morgantown, WV, 26506, United States
Parviz Famouri
Affiliation:
[email protected], West Virginia University, Lane Department of Computer Science and Electrical Engineering, Morgantown, WV, 26506, United States
Dimitris Korakakis
Affiliation:
[email protected], West Virginia University, Lane Department of Computer Science and Electrical Engineering, Morgantown, WV, 26506, United States
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Abstract

Aluminum nitride (AlN) films are being investigated for piezoelectric and high temperature applications, but the piezoelectric response is still much lower than that of more common piezoelectric materials such as lead zirconate titanate or zinc oxide. A method of maximizing the piezoelectric response of aluminum nitride has been explored by depositing stack structures composed of aluminum nitride and platinum. These stack structures were created by depositing a thin, ∼50nm, metal layer in between thicker, ∼150-350nm, layers of the piezoelectric film. Platinum was chosen as the metal interlayer due to the tendency of AlN to become highly c-oriented when deposited on Pt. An electric field was applied across the structure and displacements were measured using a Laser Doppler Vibrometer. A maximum piezoelectric coefficient d33 was found to be over two times larger than the theoretical value for AlN (3.9pm/V). However, some of the stack structures were found to be conductive when measuring the displacement. I-V measurements as well as Fowler-Nordheim theory and plots were applied to investigate tunneling due to high electric fields in the structures.

Keywords

III-Vpiezoelectricpiezoresponse
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I15-35
Copyright
Copyright © Materials Research Society 2007

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References

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