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Development of a Robust Design of a Wet Etched Co-integrated Pressure Sensor

Published online by Cambridge University Press:  20 January 2011

Wolfgang Schreiber-Prillwitz
Affiliation:
University of Hagen, Dept. of Mathematics and Computer Science, 58084 Hagen, Germany ELMOS Semiconductor AG, 44227 Dortmund, Germany
Mikko Saukoski
Affiliation:
ELMOS Semiconductor AG, 44227 Dortmund, Germany
Gerhard Chmiel
Affiliation:
ELMOS Semiconductor AG, 44227 Dortmund, Germany
Reinhart Job
Affiliation:
University of Hagen, Dept. of Mathematics and Computer Science, 58084 Hagen, Germany
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Abstract

The performance of a co-integrated silicon pressure sensor for the 1-bar full scale range was optimized. A gain in signal of ca. 5% was calculated and verified by optimizing the piezoresis-tors position on the membrane. The influence of alignment errors between the backside cavity mask and the positions of the piezoresistors on the membrane’s front side were calculated. De-pending on the asymmetry, a maximal electrical signal deviation of 1% was found. The impact of underetching effects (KOH) at the backside mask on electrical signals was also analyzed. Un-deretching has a certain range, alters the membrane size, and has a strong impact on sensor per-formances. In a worst case scenario signal variations caused by underetching could be finally reduced from 15% to 4%.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

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