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Development of A 4H-SiC CMOS Inverter

Published online by Cambridge University Press:  01 February 2011

Brett Adam Hull ,
Sei-Hyung Ryu ,
Husna Fatima ,
Jim Richmond ,
John W. Palmour  and
James Scofield
Brett Adam Hull
Affiliation:
[email protected], Cree, Inc., Power Device R&D, 4600 Silicon Dr., Durham, NC, 27703, United States, 919-313-5440, 919-313-5696
Sei-Hyung Ryu
Affiliation:
[email protected], Cree, Inc., Durham, NC, 27703, United States
Husna Fatima
Affiliation:
[email protected], Cree, Inc., Durham, NC, 27703, United States
Jim Richmond
Affiliation:
[email protected], Cree, Inc., Durham, NC, 27703, United States
John W. Palmour
Affiliation:
[email protected], Cree, Inc., Durham, NC, 27703, United States
James Scofield
Affiliation:
[email protected], Air Force Research Laboratory, Wright-Patterson AFB, OH, 45433, United States
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Abstract

In this paper we report the first 4H-SiC CMOS inverter, which was designed to be integrated in the process flow of a 4H-SiC power DMOSFET. The channels of both of the n channel and p-channel MOSFETs of the inverter were 50 um wide by 3 um long. NMOSFET threshold voltage (VTH) ranged from 4.4 V at 25°C to 2.2 V at 250°C and PMOSFET VTH ranged from -4.75 V at 25°C to just under -4 V at 300°C. The transfer threshold voltage (Vm) of the 4H-SiC CMOS inverter was in a very tight range of 2.8 V to 2.9 V over the entire temperature range of 25°C to 300°C when using a drive voltage (VDD) of 10 V.

Keywords

microelectronicsdevicessemiconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 911: Symposium B – Silicon Carbide 2006 – Materials, Processing and Devices , 2006 , 0911-B13-02
Copyright
Copyright © Materials Research Society 2006

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References

1 Ryu, S., Krishnaswami, S., Hull, B., Heath, B., Das, M., Richmond, J., Agarwal, A., and Palmour, J., Mater. Sci. Forum, Proceedings of ICSCRM 2005, Pittsburgh, PA, in press (2006).Google Scholar
2 Hull, B.A., Das, M.K., Richmond, J.T., Heath, B., Sumakeris, J.J., Geil, B., and Scozzie, C.J., Mater. Sci. Forum, Proceedings of ICSCRM 2005, Pittsburgh, PA, in press (2006).Google Scholar
3 Ryu, S., Kornegay, K.T., Cooper, J.A. Jr, and Melloch, M.R., IEEE Electron Device Lett., 18, 194 (1997).Google Scholar
4 Lam, M.P. and Kornegay, K.T., IEEE Trans. Electron Dev., 46, 546 (1999).Google Scholar
5 Afanas'ev, V.V., Bassler, M., Pensl, G., and Schulz, M., Phys. Stat. Sol. (a), 162, 321 (1997).Google Scholar
6 Lipkin, L.A. and Palmour, J.W., J. Electronic Materials, 25, 909 (1996).Google Scholar
7 Li, H., Dimitrijev, S., Harrison, H.B., and Sweatman, D., Appl. Phys. Lett. 70, 2028 (1997).Google Scholar
8 Chung, G.Y., Tin, C.C., Williams, J.R., McDonald, K., Ventra, M. Di, Pantelides, S.T., Feldman, L.C., and Weller, R.A., Appl. Phys. Lett., 76, 1713 (2000).Google Scholar
9 Han, J.S., Cheong, K.Y., Dimitrijev, S., Laube, M., and Pensl, G., Mater. Sci. Forum, 457–460, 1401 (2004).Google Scholar
10 Das, M.K., Haney, S.K., Ryu, S.-H., and Zhang, Q., presented at the 2006 Electronic Materials Conference, University Park, PA (2006).Google Scholar