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Determination of Defects Concentration from C-V and G-V Curves in a MOSFET Structure

Published online by Cambridge University Press:  31 January 2011

Nadine Abboud  and
Roland Habchi
Nadine Abboud
Affiliation:
[email protected], Lebanese University, Physics, fanar, Lebanon
Roland Habchi
Affiliation:
[email protected][email protected], Lebanese University, Physics, fanar, Lebanon
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Abstract

The gate oxides of Si based MOSFET devices are subjected to a high field in order to induce defects in the oxide bulk and at the Si/SiO2 interface. The defects are characterized by a series of gate to source capacitance and conductance measurements. Shifts in the flat band voltage and the threshold voltage are observed and are related to the position of charged defects. The difference of the equivalent charge between the two types of defects is also determined. Conductance measurements are performed to determine the difference of interface states concentration as a function of the high field exposure time.

Keywords

defectsdevicesmicroelectronics
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1195: Symposium B – Rellliability and Materials Issues of Semiconductor Optical and Electrical Devices and Materials , 2009 , 1195-B14-05
Copyright
Copyright © Materials Research Society 2010

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References

1. Streetman, B., Banerjee, S.. Solid state electronic devices. Prentice Hall, fifth edition, ISBN 0-13-025538-6, (2000).Google Scholar
2. Bae, S.J., Kim, S-J., Kuo, W., Kvam, P.H.. Statistical model for hot electron degradation in nano-scale MOSFET devices. IEEE Trans Reliab 56 (2007) 392–400.10.1109/TR.2007.903232Google Scholar
3. Singh, A.K.. An analytical study of hot carrier degradation effects in sub-micron MOS devices. Eur J Appl Phys 42 (2008) 87–94.10.1051/epjap:2008047Google Scholar
4. Chen, J.H., Wei, C.T., Hung, S.M., Wong, S.C. and Wang, Y.H.. «Breakdown and stress-induced oxide degradation mechanisms in MOSFETs». Solid State Electronics 46 (2002) 1965–1974.10.1016/S0038-1101(02)00127-2Google Scholar
5. Schwalke, U., Polzl, M., Sekinger, T., Kerber, M.. «Ultra thick gate oxides: charge generation and its impact on reliability». Microelectronics reliability 41 (2001) 1007–1010.10.1016/S0026-2714(01)00058-0Google Scholar
6. Picard, C., Brisset, C., Hoffman, A., charles, J.P., Use of electrical stress and isochronal annealing on power MOSFETs in order to characterize the effect of 60Co irradiation, Microelectronics Reliability 40 (2000) 1647–1652.10.1016/S0026-2714(00)00182-7Google Scholar
7. Clerc, R., Devoivre, T., Ghibaudo, G., Caillat, C., Guegan, G., Reimbold, G., Pananakakis, G.. “Capacitance-Voltage (C-V) characterization of 20A0 thick gate oxide: parameter extraction and modelling». Microelectronics Reliability 40 (2000) 571–575.10.1016/S0026-2714(99)00260-7Google Scholar
8. Soliman, L., Duval, E., Benzohra, M., Lheurette, E., Ketata, K., Ketata, M.. Improvement of oxide thickness determination on MOS structures using capacitance–voltage measurements at high frequencies. Materials Science in Semiconductor Processing 4 (2001) 163–166.10.1016/S1369-8001(00)00131-1Google Scholar
9. Nicollian, E.H., goetzberger, A.. The Si-SiO2 interface electrical properties as determined bythe MIS conductance technique. Bell System Technical Journal 46 (1967) 1055–1133.10.1002/j.1538-7305.1967.tb01727.xGoogle Scholar
10. Duval, E., Lheurette, E.. Characterisation of charge trapping at the Si-SiO2 (100) interface using high-temperature conductance spectroscopy. Microelectronic Engineering 65 (2003) 103–112.10.1016/S0167-9317(02)00732-3Google Scholar
11. Goetzberger, A., Heine, V., Nicollian, E.H.. «Surface states in silicon from charges in the oxide coating». Applied Physics Letters 12 (1968) 95–97.10.1063/1.1651913Google Scholar
12. Hill, W.A., Coleman, C.C.. A single frequency approximation for interface state density determination. Solid State Electronics 23 (1980) 987–993.10.1016/0038-1101(80)90064-7Google Scholar