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Details of the improvement of crystalline quality of a-plane GaN using one-step lateral growth

Published online by Cambridge University Press:  01 February 2011

Daisuke Iida ,
Tetsuya Nagai ,
Takeshi Kawashima ,
Aya Miura ,
Yoshizane Okadome ,
Yosuke Tsuchiya ,
Motoaki Iwaya ,
Satoshi Kamiyama ,
Hiroshi Amano  and
Isamu Akasaki
Daisuke Iida
Affiliation:
[email protected], Meijo University, Materials Science and Engineering, Faculty of Science and Technology, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, 468-8502, Japan, +81-52-832-1151, +81-52-832-1244
Tetsuya Nagai
Affiliation:
[email protected], Meijo University, Materials Science and Engineering, Faculty of Science and Technology, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, 468-8502, Japan
Takeshi Kawashima
Affiliation:
[email protected], Meijo University, Materials Science and Engineering, Faculty of Science and Technology, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, 468-8502, Japan
Aya Miura
Affiliation:
[email protected], Meijo University, Materials Science and Engineering, Faculty of Science and Technology, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, 468-8502, Japan
Yoshizane Okadome
Affiliation:
[email protected], Meijo University, Materials Science and Engineering, Faculty of Science and Technology, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, 468-8502, Japan
Yosuke Tsuchiya
Affiliation:
[email protected], Meijo University, Materials Science and Engineering, Faculty of Science and Technology, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, 468-8502, Japan
Motoaki Iwaya
Affiliation:
[email protected], Meijo University, Materials Science and Engineering, Faculty of Science and Technology, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, 468-8502, Japan
Satoshi Kamiyama
Affiliation:
[email protected], Meijo University, Materials Science and Engineering, Faculty of Science and Technology, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, 468-8502, Japan
Hiroshi Amano
Affiliation:
[email protected], Meijo University, Materials Science and Engineering, Faculty of Science and Technology, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, 468-8502, Japan
Isamu Akasaki
Affiliation:
[email protected], Meijo University, Materials Science and Engineering, Faculty of Science and Technology, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, 468-8502, Japan
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Abstract

Low defect density a-plane GaN films were successfully grown by sidewall epitaxial lateral overgrowth (SELO) technique. Control of V/III ratio during the growth of GaN by metalorganic vapor phase epitaxy (MOVPE) was found to be very important to achieve a complete overgrowth on the SiO2 mask regions and atomically flat surface. The threading dislocation and stacking fault densities in the overgrown regions were lower than 106 cm−2 and 103 cm−1, respectively. The root mean square roughness was 0.09 nm. We also fabricated and characterized a-plane-GaN-based-light-emitting diodes (LEDs) using SELO technique. The light output power of the blue-green LED steeply increased with the decrease of threading dislocation density from 1010 cm−2 to 108 cm−2 and tended to saturate at lower dislocation densities.

Keywords

nitridecrystal growthcrystalline
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I04-02
Copyright
Copyright © Materials Research Society 2007

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References

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