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Deposition Profile Control of Carbon Films on Patterned Substrates using a Hydrogen-assited Plasma CVD Method

Published online by Cambridge University Press:  31 January 2011

Takuya Nomura ,
Kazunori Koga ,
Masaharu Shiratani ,
Yuichi Setsuhara ,
Makoto Sekine  and
Masaru Hori
Takuya Nomura
Affiliation:
[email protected], Kyushu University, Fukuoka, Japan
Kazunori Koga
Affiliation:
[email protected], Kyushu University, JST CREST, Fukuoka, Japan
Masaharu Shiratani
Affiliation:
[email protected], Kyushu University, JST CREST, Fukuoka, Japan
Yuichi Setsuhara
Affiliation:
[email protected], Osaka University, JST CREST, Osaka, Japan
Makoto Sekine
Affiliation:
[email protected], Nagoya University, JST CREST, Nagoya, Japan
Masaru Hori
Affiliation:
[email protected], Nagoya University, JST CREST, Nagoya, Japan
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Abstract

We have studied effects of H atom source on deposition profiles of carbon films, deposited by H assisted anisotropic plasma CVD method. Deposition rate normalized by that for the aspect ratio of 1 at sidewall and bottom decreases with increasing discharge power of H atom source from 0 W to 500 W, because the incident H atom flux per surface area in a trench increases and H atoms etch carbon films.

Keywords

Cmicroelectro-mechanical (MEMS)plasma-enhanced CVD (PECVD) (deposition)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1222: Symposium DD – Microelectromechanical Systems — Materials and Devices III , 2009 , 1222-DD05-16
Copyright
Copyright © Materials Research Society 2010

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