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Deposition of Thin SiO2 Films on Polymers as a Hard – Coating using a Microwave – ECR Plasma

Published online by Cambridge University Press:  10 February 2011

K. Sano ,
H. Tamamaki ,
M. Nomura ,
S. Wickramanayaka ,
Y. Nakanishi  and
Y. Hatanaka
K. Sano
Affiliation:
Development Division II, Suzuki Motor Corporation, 300 Takatsuka-cho, Hamamatsu-shi
H. Tamamaki
Affiliation:
Development Division II, Suzuki Motor Corporation, 300 Takatsuka-cho, Hamamatsu-shi
M. Nomura
Affiliation:
Development Division II, Suzuki Motor Corporation, 300 Takatsuka-cho, Hamamatsu-shi
S. Wickramanayaka
Affiliation:
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu-shi
Y. Nakanishi
Affiliation:
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu-shi
Y. Hatanaka
Affiliation:
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu-shi
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Abstract

SiO2 thin films were deposited on automobile plastics at low temperatures using a microwave activated ECR plasma. Oxygen was used as the plasma gas while tetraethoxysilane (TEOS) was used as the source gas which was introduced into the downstream. In the present investigation high quality SiO2 films were deposited on polycarbonate (PC) and polypropylene (PP) substrates with and without a mesh and the characteristics of hard coating films were studied. The film growth rate increases with the decrease of substrate temperature when a mesh is inserted into the plasma. The irregularities of polymer surfaces could be planarized by the deposition of 1.0 μm thick SiO2 film. The dynamic hardness of PC and PP are increased by the deposition of SiO2 film, however, films deposited on PP is seen to be cracked while that of on PC is crack-free.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 430: Symposium O – Microwave Processing of Materials V , 1996 , 647
Copyright
Copyright © Materials Research Society 1996

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