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Deposition of Microcrystalline Si,Ge (µc-Si,Ge) Alloys by Reactive Magnetron Sputtering

Published online by Cambridge University Press:  28 February 2011

S.M. Cho ,
D. Wolfe ,
S.S. He ,
K. Christensen ,
D.M. Maher  and
G. Lucovsky
S.M. Cho
Affiliation:
Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering, North Carolina State University, Raleigh, N.C. 27695-8202
D. Wolfe
Affiliation:
Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering, North Carolina State University, Raleigh, N.C. 27695-8202
S.S. He
Affiliation:
Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering, North Carolina State University, Raleigh, N.C. 27695-8202
K. Christensen
Affiliation:
Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering, North Carolina State University, Raleigh, N.C. 27695-8202
D.M. Maher
Affiliation:
Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering, North Carolina State University, Raleigh, N.C. 27695-8202
G. Lucovsky
Affiliation:
Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering, North Carolina State University, Raleigh, N.C. 27695-8202
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Abstract

SixGei1−x:H alloys which span the transition from amorphous to microcrystalline structures have been prepared by reactive magnetron sputtering (RMS) from pure crystalline Si and Ge targets in different partial pressures of hydrogen, using argon as the sputtering gas. Film properties were studied as a function of H2 flow and partial pressure. X-ray diffraction (XRD), Raman scattering, Fourier transform infrared spectroscopy (FTIR), reflection high-energy electron diffraction (RHEED), and high resolution transmission electron microscopy (HRTEM) have been used for microstructural characterization. Films prepared by RMS at a partial pressure of hydrogen (PH2) < ∼ 4 mTorr were amorphous, while those prepared with PH2 > ∼ 6 mTorr were microcrystalline.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 781
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1 Usui, S. and Kikuchi, M., J. Non-Cryst. Solids 34, 1 (1979).Google Scholar
2 Hamasaki, T., Kurata, H., Hirose, M., and Osaka, Y., Appl. Phys. Lett. 37, 1084 (1980).Google Scholar
3 Wang, C., Ph.D thesis, North Carolina State University, 1991 Google Scholar
4 Rudder, R.A., Cook, J.W., and Lucovsky, G., Appl. Phys. Lett. 43, 871 (1983); Appl. Phys. Lett. 45, 887 (1984).Google Scholar
5 Veprek, S., Sarott, F.A. and Iqbal, Z., Physics. Rev. 36, 3344 (1987).Google Scholar
6 Turner, W.A., Williams, M.J., Chen, Y.L., Maher, D.M. and Lucovsky, G. in Microcrystaline Semiconductors-Materials Science and Devices, edited by Aoyagi, Y., Canham, L.T., Fauchet, D.M., Shimizu, I. and Tsai, C.C.: Mater. Res. Soc. Symp. Proc. 283, 567 (1993).Google Scholar