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Published online by Cambridge University Press: 21 February 2011
Thin films (100–400 nm) of lead silicate glass have been deposited by RF magnetron sputtering in Ar plasma at different discharge conditions. The interaction of the sputtered species with the gas atoms during the transport process through the discharge region and the kinetics of growth of the films have been investigated as a function of the target composition and of the substrate temperature. This study demonstrates the possibility of controlling the surface electrical resistance of the films in a wide range of values ranging from 1012 to 1017 during the film growth.