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Deposition of a-Ge:H in a Remote Plasma System

Published online by Cambridge University Press:  25 February 2011

M. Heintze ,
C. E. Nebel  and
G. H. Bauer
M. Heintze
Affiliation:
Institut für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, 7000-Stuttgart-80, FRG.
C. E. Nebel
Affiliation:
Institut für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, 7000-Stuttgart-80, FRG.
G. H. Bauer
Affiliation:
Institut für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, 7000-Stuttgart-80, FRG.
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Abstract

The remote plasma deposition process was studied by optical emission spectroscopy using Ne and N2 to detect He-metastables. a- Ge:H was prepared and its optoelectronic and structural properties were characterized. AM 1.5 photoconductivities around 10−6(Ωcm)−1 were obtained in intrinsic material with the Fermi level position lying near midgap. However, even in the best film the defect density is higher than 1017cm−3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 565
Copyright
Copyright © Materials Research Society 1990

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References

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