No CrossRef data available.
Article contents
Density of States in Tritiated Amorphous Silicon Measured Using CPM
Published online by Cambridge University Press: 01 February 2011
Abstract
The constant photocurrent method has been used to obtain the density of occupied electronic states of tritiated amorphous silicon thin films. The analyses showed a peak of defects located 1.24 eV below the conduction band edge, suggesting that the main type of defect present in the films was a doubly occupied dangling bond. The concentration of defect states increases as a result of tritium decay by about two orders of magnitude over a period of 500 hours. The defect density in the tritiated amorphous silicon samples could be reduced by thermal annealing, after which it increased once more.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 2005