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Density of States in Tritiated Amorphous Silicon Measured Using CPM

Published online by Cambridge University Press:  01 February 2011

Simone Pisana*
Affiliation:
Department of Electrical & Computer Engineering, University of Toronto Toronto, ON M5S 3G4, Canada
Stefan Costea
Affiliation:
Department of Electrical & Computer Engineering, University of Toronto Toronto, ON M5S 3G4, Canada
Tome Kosteski
Affiliation:
Department of Electrical & Computer Engineering, University of Toronto Toronto, ON M5S 3G4, Canada
Nazir P. Kherani
Affiliation:
Department of Electrical & Computer Engineering, University of Toronto Toronto, ON M5S 3G4, Canada
Stefan Zukotynski
Affiliation:
Department of Electrical & Computer Engineering, University of Toronto Toronto, ON M5S 3G4, Canada
Walter T. Shmayda
Affiliation:
†† Laboratory for Laser Energetics, University of Rochester, Rochester, NY 14623–1299, USA
*
Department of Engineering, University of Cambridge, Trumpington Street, Cambridge, CB2 1PZ, UK
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Abstract

The constant photocurrent method has been used to obtain the density of occupied electronic states of tritiated amorphous silicon thin films. The analyses showed a peak of defects located 1.24 eV below the conduction band edge, suggesting that the main type of defect present in the films was a doubly occupied dangling bond. The concentration of defect states increases as a result of tritium decay by about two orders of magnitude over a period of 500 hours. The defect density in the tritiated amorphous silicon samples could be reduced by thermal annealing, after which it increased once more.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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References

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