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Demonstration of 3C-SiC MEMS Structures on Polysilicon-on-oxide Substrates

Published online by Cambridge University Press:  01 February 2011

Christopher Locke ,
Christopher Frewin ,
Luca Abbati  and
Stephen E. Saddow
Christopher Locke
Affiliation:
[email protected], University of South Florida, 4202 E. Fowler Ave, ENB 118, Tampa, Florida, 33620, United States
Christopher Frewin
Affiliation:
[email protected], University of South Florida, Tampa, Florida, United States
Luca Abbati
Affiliation:
[email protected], University of Perugia, Dept. of Electrical Engineering, Perugia, Italy
Stephen E. Saddow
Affiliation:
[email protected], University of South Florida, Electrical Engineering, Tampa, Florida, United States
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Abstract

Silicon carbide has robust mechanical, electrical, and chemical properties which make it an attractive material candidate for micro- and nano-electromechanical systems (MEMS and NEMS). 3C-SiC films grown via a polysilicon seed-layer CVD-deposited on an oxide coated (111) Si substrate offers an innovative method to overcome the residual film stress issues associated with 3C-SiC heteroepitaxy and the difficulties of fabricating structures from 3C-SiC films. The oxide plays a dual role by permitting film relaxation with respect to the supporting substrate and functioning as a MEMS release layer, allowing MEMS structures such as cantilevers and diaphragms, to be easily fabricated from the 3C-SiC film. The impact of the oxide layer on the relaxation of the film stress was investigated by comparing direction-sensitive MEMS stress sensors fabricated from 3C-SiC films grown via a polysilicon-on-oxide-coated-substrate and a polysilicon-on-crystalline Si substrate. Scanning Electron Microscopy (SEM) analysis of bridge structures fabricated on the polysilicon-on-oxide substrate revealed evidence of film strain relaxation when compared to bridge structures fabricated on the polysilicon-on-crystalline Si substrate. However, the upward-curled cantilever and comb structures fabricated on both substrates indicate the presence of a strain gradient in the 3C-SiC film grown on both substrates.

Keywords

microelectro-mechanical (MEMS)epitaxypolycrystal
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1246: Symposium B – Silicon Carbide 2010-Materials, Processing and Devices , 2010 , 1246-B08-05
Copyright
Copyright © Materials Research Society 2010

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