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Delamination Behavior of Cu-Low-k Stack Under Different Slurries
Published online by Cambridge University Press: 01 February 2011
Abstract
Lower mechanical strength, reduced cohesive strength and lack of compatibility with other interconnect materials, are the major challenges involved in chemical mechanical polishing (CMP) of Cu metallization with ultra low-k materials as interlayer dielectrics. In this study we have investigated the polishing behavior of patterned Cu samples with underneath different low-k materials using two different slurries and a wide range of machine parameters. CMP micro tribometer was used to polish the samples with different rotations of platen (50 to 250 RPM) and down forces (1-6 PSI). Friction co-efficient and wear behavior were also investigated at different conditions. Optical and scanning electron microscopy was used to investigate the polished surface. It was observed that the two different Cu slurries used for polishing have marked effects on the polishing of Cu-low-k stack with respect to wear and delamination.
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- Copyright © Materials Research Society 2003