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Defects and Morphology of Homoepitaxial Diamond Films on Natural Nonplanar and Isotopically Pure Planar Substrates

Published online by Cambridge University Press:  10 February 2011

Thomas S. McCauley  and
Yogesh K. Vohra
Thomas S. McCauley
Affiliation:
Department of Physics, University of Alabama at Birmingham (UAB) Birmingham, AL 35294-1170
Yogesh K. Vohra
Affiliation:
Department of Physics, University of Alabama at Birmingham (UAB) Birmingham, AL 35294-1170
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Abstract

We have carried out diamond deposition by microwave plasma-assisted chemical vapor deposition (MPCVD) on planar and nonplanar diamond substrates at temperatures between 850° and 2000° C. The nonplanar and planar substrates were the polished (100) surfaces of type Ia natural diamond anvils and isotopically pure (99.95% 12C) type Ila synthetic crystals, respectively. The extremely low level of lattice and optical defects in the isopure substrates relative to natural crystals makes them ideal for optical characterization and defect studies, as well as high performance optical and electronic applications [1's (1) geometry, (2) type (defect density), and (3) temperature. The phase purity and defect structure of the films were analyzed by micro-Raman and low temperature photoluminescence (PL) spectroscopy. Optical and atomic force microscopy (AFM) were used to examine the surface morphology of the films. High temperature growth on the nonplanar anvil tip was anisotropic and extremely rapid (50-400 μm/hr), with significant incorporation of optically active defects. A possible model for the observed rapid growth is discussed. The films grown at lower temperatures on planar isopure substrates showed a dense array of oriented, stepped, square growth hillocks with penetration twins at their tops, while those grown at higher temperatures exhibited reasonably smooth, <110> oriented macrosteps. The higher temperature planar films showed a larger variety of incorporated optical centers than the lower temperature films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 416: Symposium DD – Diamond for Electronic Applications , 1995 , 63
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

1. Banholzer, W.F. and Anthony, T.R., Thin Solid Films 111, 222 (1992).Google Scholar
2. McCauley, T.S. and Vohra, Y K., App. Phys. Lett. 66 (12), 1486 (1995).Google Scholar
3. McCauley, T.S. and Vohra, Y.K., pp. 377–380, Applications of Diamond Films and Related Materials: Third International Conference, ed. by Feldman, A., Tzeng, Y., Yarbrough, W.A., Yoshikawa, M., Murakawa, M.,NIST Special Publication 885, Gaithersburg, MD (1995).Google Scholar
4. Snail, K.A. and Hanssen, L.M., J. Crystal Growth 112, 651 (1991).Google Scholar
5. McCauley, T.S., and Vohra, Y K., Advances in New Diamond Science and Technology, ed. by Saito, S., Fujimori, N., Funkunaga, O., Kamo, M., Kobashi, K., and Yoshikawa, M., MYU Tokyo(1994).Google Scholar
6. McCauley, T.S. and Vohra, Y K., Phys. Rev. B 49, 5046 (1994).Google Scholar
7. Fang, P.H., App. Phys. Lett. 66 (20), 2739 (1995).Google Scholar
8. D'Evelyn, M.P., Struck, L.M., and Rawles, R.E., MRS Symp. Proc. 339, Diamond, Silicon Carbide, and Nitride Wide-Bandgap Semiconductors, 89 (1994).Google Scholar
9. van Enckevort, W.J.P., Janssen, G., Vollenberg, W., Schermer, J.J., Giling, L.J., and Seal, M., Diam. and Relat. Mat. 2, 997 (1993).Google Scholar
10. Tamor, M.A. and Everson, M.P., J. Mater. Res. 9 (7), 1839 (1994).Google Scholar
11. Wild, C., Koidl, P., Muller-Sebert, W., Walcher, H., Kohl, R., Herres, N., and Locher, R., Diam. and Relat. Mat. 2, 158 (1993).Google Scholar
12. Gorokhovsky, A.A., Turukhin, A.V., Alfano, R.R., and Phillips, W., App. Phys. Lett. 66 (1), 43 (1995).Google Scholar
13. Vitton, J.P., Garenne, J.J., and Truchet, S., Diam. and Relat. Mat. 2, 713 (1993).Google Scholar
14. Snail, K.A. and Marks, C., App. Phys. Lett. 60 (25), 3135 (1992).Google Scholar
15. Collins, A.T. and Lawson, S.C., J. Phys. Condens. Matt. 1, 6929 (1989b).Google Scholar