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Defects and Microstructure in Optimized a-Si:Ge:H - New Results from Electron Spin Resonance Experiments

Published online by Cambridge University Press:  15 February 2011

C. Malten ,
F. Finger ,
J. Fölsch ,
T. Kulessa ,
H. Wagner ,
S. Ray ,
A. R. Middya  and
S. Hazra
C. Malten
Affiliation:
Institut fur Schicht- und Ionentechnik, Forschungszentrum Jülich, 52425 Jülich, Germany
F. Finger
Affiliation:
Institut fur Schicht- und Ionentechnik, Forschungszentrum Jülich, 52425 Jülich, Germany
J. Fölsch
Affiliation:
Institut fur Schicht- und Ionentechnik, Forschungszentrum Jülich, 52425 Jülich, Germany
T. Kulessa
Affiliation:
Institut fur Schicht- und Ionentechnik, Forschungszentrum Jülich, 52425 Jülich, Germany
H. Wagner
Affiliation:
Institut fur Schicht- und Ionentechnik, Forschungszentrum Jülich, 52425 Jülich, Germany
S. Ray
Affiliation:
Indian Association For The Cultivation Of Science, Calcutta - 700032, India
A. R. Middya
Affiliation:
Indian Association For The Cultivation Of Science, Calcutta - 700032, India
S. Hazra
Affiliation:
Indian Association For The Cultivation Of Science, Calcutta - 700032, India
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Abstract

Amorphous silicon germanium alloys with improved properties for photovoltaic applications are investigated by electron spin resonance. Spin densities in this material are strongly reduced with optimized deposition conditions. Still the Ge dangling bond remains the dominating deep defect and the ratio of Ge over Si dangling bond defects is not much changed. The spin resonance spectra of these samples show distinctive differences from conventional material. The superposition signal can not be deconvoluted into modified Si- and Ge- dangling bond resonances as done previously. Instead a lineshape asymmetry or additional resonances are needed to deconvolute the spectra. The development of g-values with alloy composition indicate a more homogeneous chemical ordering in optimized material in agreement with other experimental data.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 559
Copyright
Copyright © Materials Research Society 1995

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References

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