Hostname: page-component-78c5997874-dh8gc Total loading time: 0 Render date: 2024-11-02T23:42:53.604Z Has data issue: false hasContentIssue false
  • English
  • Français

Defects and Interfaces in GaAs Grown on Si

Published online by Cambridge University Press:  28 February 2011

S. McKernan ,
J. G. Zhu ,
C. B. Carter ,
E. Caridi  and
W. Schaff
S. McKernan
Affiliation:
Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, NY 14853
J. G. Zhu
Affiliation:
Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, NY 14853
C. B. Carter
Affiliation:
Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, NY 14853
E. Caridi
Affiliation:
School of Electrical Engineering, Phillips Hall, Cornell University, Ithaca, NY 14853
W. Schaff
Affiliation:
School of Electrical Engineering, Phillips Hall, Cornell University, Ithaca, NY 14853
Get access

Abstract

The characterization of semiconductor epilayers by electron microscopy has revealed many different defects in the epilayer. Observations on three representative examples from GaAs epilayers grown on Si are presented. Double-ribbons, which are formed as a result of dislocation interactions near the heterojunction, have been used to determine the intrinsic and extrinsic stacking-fault energies in GaAs. Inverted stacking-fault pyramids have been observed which have nucleated in the epilayer and grown outward to the surface. Finally, differences in the growth rates of different twins are recorded by using AlGaAs layers to preserve the growth surface at various stages during epilayer growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , 273
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Kuesters, K.-H., Cooman, B. C. De and Carter, C. B., Phil. Mag. 53, 141 (1986)CrossRefGoogle Scholar
2 Carter, C. B., phys. stat. sol. (a) 61, 579 (1980) and 80, 51 (1983)CrossRefGoogle Scholar
3 Cooman, B. C. De and Carter, C. B., Appl. Phys. Lett 50, 40 (1987)Google Scholar
4 Zhu, J. G., McKernan, S., and Carter, C. B., to be publishedGoogle Scholar
5 Kuesters, K.-H., Cooman, B. C. De, Shealy, J. R. and Carter, C. B., J. Cryst Growth 71, 514 (1985)Google Scholar