Hostname: page-component-745bb68f8f-v2bm5 Total loading time: 0 Render date: 2025-01-12T09:43:56.612Z Has data issue: false hasContentIssue false
  • English
  • Français

Defect-Engineered Graded GexSi1-x Buffers on Si (001) with Extreme Low Threading Dislocation Density

Published online by Cambridge University Press:  26 February 2011

G. Kissinger ,
T. Morgenstern ,
G. Morgenstern ,
H. B. Erzgräber  and
H. Richter
G. Kissinger
Affiliation:
Institut fur Halbleiterphysik Frankfurt (Oder) GmbH, Walter-Korsing-Str.2, D-15230 Frankfurt (Oder), Germany
T. Morgenstern
Affiliation:
Institut fur Halbleiterphysik Frankfurt (Oder) GmbH, Walter-Korsing-Str.2, D-15230 Frankfurt (Oder), Germany
G. Morgenstern
Affiliation:
Institut fur Halbleiterphysik Frankfurt (Oder) GmbH, Walter-Korsing-Str.2, D-15230 Frankfurt (Oder), Germany
H. B. Erzgräber
Affiliation:
Institut fur Halbleiterphysik Frankfurt (Oder) GmbH, Walter-Korsing-Str.2, D-15230 Frankfurt (Oder), Germany
H. Richter
Affiliation:
Institut fur Halbleiterphysik Frankfurt (Oder) GmbH, Walter-Korsing-Str.2, D-15230 Frankfurt (Oder), Germany
Get access

Abstract

Stepwise equilibrated graded GexSii-x (x≤0.2) buffers with threading dislocation densities between 102 and 103 cm−2 on the whole area of 4 inch silicon wafers were grown and studied by transmission electron microscopy, defect etching, atomic force microscopy and photoluminescence spectroscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 141
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Ismail, K., LeGoues, F. K., Saenger, K. L., Arafa, M., Chu, J. O., Mooney, P. M., and Meyerson, B. S., Phys. Rev. Lett. 73, 3447 (1994).Google Scholar
2. Tuppen, C. G., Gibbings, C. J., and Hockley, M., Mat. Res. Soc. Proc. Vol.220,187 (1991).Google Scholar
3. Fitzgerald, E. A., Xie, Y.-H., Green, M. L., Brasen, D., Kortan, A. R., Michel, J., Mii, Y.-J., and Weir, B. E., Appl. Phys. Lett. 59, 811 (1991).Google Scholar
4. Hsu, J. W. P., Fitzgerald, E. A., Xie, Y. H., Silverman, P. J., and Cardillo, M. J., Appl. Phys. Lett. 61,1293 (1992).Google Scholar
5. Xie, Y. H., Fitzgerald, E. A., Monroe, D., Silverman, P. J., and Watson, G. P., J. Appl. Phys. 73,8364 (1993).Google Scholar
6. Watson, G. P., Fitzgerald, E. A., Xie, Y.-H., and Monroe, D., J. Appl. Phys. 75, 263 (1994).Google Scholar
7. LeGoues, F. K., Meyerson, B. S., and Morar, J. F., Phys. Rev. Lett. 66, 2903 (1991).Google Scholar
8. Ismail, K., Meyerson, B. S., and Wang, P. J., Appl. Phys. Lett. 58, 2117 (1991).Google Scholar
9. LeGoues, F. K., Meyerson, B. S., Morar, J. F., and Kirchner, P. D., J. Appl. Phys. 71,4230 (1992).Google Scholar
10. Kissinger, G., Morgenstern, T., Morgenstern, G., and Richter, H., German Patent Application DE-P 44 38 380.0 (27.10.1994).Google Scholar
11. Kissinger, G., Morgenstern, G., and Richter, H., J. Appl. Phys. 75, 4994 (1994).Google Scholar
12. Zaumseil, P., phys. stat. sol. (a) 140,421 (1993).Google Scholar
13. Zaumseil, P., Jagdhold, U., and Krüger, D., J. Appl. Phys. 76, 2191 (1994).Google Scholar
14. Kissinger, G., Morgenstern, T., Morgenstern, G., and Richter, H., Appl. Phys. Lett, to appear 17 April (1995).Google Scholar
15. Yang, K. H., J. Electrochem. Soc. 131,1140 (1984).Google Scholar
16. Staiger, W., Pfeiffer, G., Weronek, K., Höpner, A., and Weber, J., Mater. Sci. Forum, 143–147, 1571 (1994).Google Scholar
17 Tang, H. P., Vescan, L., Dieker, C., Schmidt, K., Luth, H., and Li, H. D., J. Cryst. Growth 125, 301 (1992).Google Scholar