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Defect Structures in Neutron Irradiated 6H-SiC Studied by X-Ray Diffraction Line Profile Analysis

Published online by Cambridge University Press:  21 March 2011

C. Seitz ,
A. Magerl ,
R. Hock ,
H. Heissenstein  and
R. Helbig
C. Seitz
Affiliation:
Lehrstuhl für Kristallographie und Strukturphysik, Universität Erlangen-Nürnberg, Bismarckstr. 10, D-91054 Erlangen, Germany
A. Magerl
Affiliation:
Lehrstuhl für Kristallographie und Strukturphysik, Universität Erlangen-Nürnberg, Bismarckstr. 10, D-91054 Erlangen, Germany
R. Hock
Affiliation:
Lehrstuhl für Kristallographie und Strukturphysik, Universität Erlangen-Nürnberg, Bismarckstr. 10, D-91054 Erlangen, Germany
H. Heissenstein
Affiliation:
Lehrstuhl für Angewandte Physik, Universität Erlangen-Nürnberg, Staudtstr. 7/A3, D-91058 Erlangen, Germany
R. Helbig
Affiliation:
Lehrstuhl für Angewandte Physik, Universität Erlangen-Nürnberg, Staudtstr. 7/A3, D-91058 Erlangen, Germany
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Abstract

We have investigated by x-ray diffraction defect structures in 6H-SiC after neutron irradiation with different fluences and followed by different annealing procedures. An interpretation along a model of Klimanek [1, 4–6] shows, that higher fluences lead to a stronger than linear reduction of the correlation length, whereas higher annealing temperatures correlate with a better recovery of the correlation length. In addition defects of 1st kind created by irradiation are reduced by annealing. We find that annealing changes the character of the defects and it accentuates a defect structure already present in the original samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H6.4
Copyright
Copyright © Materials Research Society 2001

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References

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