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Defect Engineering in SI:ER Technology

Published online by Cambridge University Press:  10 February 2011

N. A. Sobolev ,
O. V. Alexandrov ,
M. S. Bresler ,
V. V. Emtsev ,
O. B. Gusev ,
D. S. Poloskin  and
E. I. Shek
N. A. Sobolev
Affiliation:
loffe Physico-Technical Institute, St. Petersburg 194021, Russia, [email protected]
O. V. Alexandrov
Affiliation:
loffe Physico-Technical Institute, St. Petersburg 194021, Russia, [email protected]
M. S. Bresler
Affiliation:
loffe Physico-Technical Institute, St. Petersburg 194021, Russia, [email protected]
V. V. Emtsev
Affiliation:
loffe Physico-Technical Institute, St. Petersburg 194021, Russia, [email protected]
O. B. Gusev
Affiliation:
loffe Physico-Technical Institute, St. Petersburg 194021, Russia, [email protected]
D. S. Poloskin
Affiliation:
loffe Physico-Technical Institute, St. Petersburg 194021, Russia, [email protected]
E. I. Shek
Affiliation:
loffe Physico-Technical Institute, St. Petersburg 194021, Russia, [email protected]
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Abstract

Recent results contributing to our understanding of mechanisms of defect formation and excitation of Er luminescence in Si:Er system are presented. An essential role of non-equilibrium intrinsic point defects in Er-related defects formation for both implanted and in-diffused Si:Er structures is demonstrated.

The data of electroluminescence (EL) measurements evidence that the Er3+ excitation occurs via capture of free excitons on neutral Er-related donor centers with subsequent Augerrecombination of bound excitons.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 422: Symposium D – Rare-Earth Doped Semiconductors II , 1996 , 125
Copyright
Copyright © Materials Research Society 1996

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References

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