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Defect Creation by Electronic Processes in MgO Bombarded with GeV Heavy Ions

Published online by Cambridge University Press:  21 February 2011

M. Beranger ,
P. Thevenard ,
R. Bremer  and
E. Balanzat
M. Beranger
Affiliation:
Département de Physique des Matériaux, Université Claude Bernard, LYON I, 69622 VILLEURBANNE Cedex, France
P. Thevenard
Affiliation:
Département de Physique des Matériaux, Université Claude Bernard, LYON I, 69622 VILLEURBANNE Cedex, France
R. Bremer
Affiliation:
Département de Physique des Matériaux, Université Claude Bernard, LYON I, 69622 VILLEURBANNE Cedex, France
E. Balanzat
Affiliation:
Centre Interdisciplinaire de Recherches avec les Ions Lourds, 14040 CAEN Cedex, France
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Abstract

To study the defect creation induced by electronic processes in refractory oxides, MgO single crystals were irradiated with high energy tin, uranium and lead ions. Optical absorption measurements showed that F-type centers (oxygen vacancies with trapped electrons) were created during irradiation. The total number of centers per unit area of bombarded sample increases linearly with irradiating fluence. The main part of the point defects was found to arise from electronic processes. The concentration of F-type centers induced by ionization increases with the electronic energy losses. Assuming a saturation of point defect concentration at high fluences, F-type center creation cross sections could be estimated. The influence of irradiation temperature and of the velocity of the bombarding ions are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 396: Symposium A – Ion-Solid Interactions for Materials Modification and Processing , 1995 , 365
Copyright
Copyright © Materials Research Society 1996

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