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Defect Characterization of High-Rate Deposited Hydrogenated Amorphous Silicon Films

Published online by Cambridge University Press:  10 February 2011

Florence Y. M. Chan ,
Y. W. Lam ,
Y. C. Chan ,
S. H. Lin ,
X. Y. Lin ,
W. S. Lau  and
S. J. Chua
Florence Y. M. Chan
Affiliation:
Department of Electronic Engineering, City University of Hong Kong, Hong Kong
Y. W. Lam
Affiliation:
Department of Electronic Engineering, City University of Hong Kong, Hong Kong
Y. C. Chan
Affiliation:
Department of Electronic Engineering, City University of Hong Kong, Hong Kong
S. H. Lin
Affiliation:
Department of Electronic Engineering, City University of Hong Kong, Hong Kong
X. Y. Lin
Affiliation:
Department of Physics, Shantou University, Guangdong, P. R. China (515063)
W. S. Lau
Affiliation:
Department of Electrical Engineering, National University of Singapore, Republic of Singapore
S. J. Chua
Affiliation:
Department of Electrical Engineering, National University of Singapore, Republic of Singapore
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Abstract

High rate deposition of a-Si:H films has become one of the key techniques for low-cost, large-scale production of thin film devices. Hydrogenated amorphous silicon films were fabricated with a thermocatalytic PCVD method of which the deposition rate was up to 1.5 nm/sec. The Heterojunction Monitored Capacitance method was employed to determine the midgap-state densities in the undoped semiconductor film from high frequency C-V characteristics. Experimental results showed that the thermocatalytic PCVD method is an effective way to produce high-rate deposited a-Si:H films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 599
Copyright
Copyright © Materials Research Society 1996

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References

1. Spear, W. E. and LeComber, P. G., J. Non-Cryst. Solids 8/9, p. 727(1972).Google Scholar
2. Scott, B.A., Appl. Phys. Lett., 37, p. 725(1980).Google Scholar
3. Matshshita, T., Komori, K., Konagai, M. and Takahashi, K., Appl. Phys. Lett., 44, p. 10 92 (1984).Google Scholar
4. Hamasaki, T., Appl. Phys. Lett., 44, p.600(1984).Google Scholar
5. , X. Lin, Y and Lin, K. X., J. Shantou University (Natural Science) (in Chinese), 5–1, p.43 (1990).Google Scholar
6. Chen, Y. E., Wang, F. S., Tsai, J. W. and Cheng, H. C., Jpn. J. Appl. Phys. 33, p. 6727 (1994).Google Scholar
7. Lang, D. V., Cohen, J. D., and Harbison, J. P., Phys. Rev. B 25, p.5285(1982).Google Scholar
8. Matsuura, H. and Okushi, H., J. Appl. Phys. 62, p. 2871(1987).Google Scholar
9. Matsuura, H., Okuno, T., Ikushi, H., and Tanaka, K., J. Appl. Phys. 55, p. 1012 (1984).Google Scholar
10. Matsuura, H., IEEE Trans. Electron Devices ED–36, p. 2908(1989).Google Scholar
11. Matsuura, H., Jpn. J. Appl. Phys. 27, L513(1988).Google Scholar
12. Matsuura, H., J. Appl. Phys. 64, p. 1964(1988).Google Scholar
13. Iyer, S. B., Kumar, V. and Harshavardhan, K. S., Solid-State Electrons, 34–6, p.535, (1991)Google Scholar