Hostname: page-component-78c5997874-v9fdk Total loading time: 0 Render date: 2024-11-02T23:28:07.344Z Has data issue: false hasContentIssue false
  • English
  • Français

Deep Ultraviolet Light Emitting Diodes with Emission below 300 nm

Published online by Cambridge University Press:  01 February 2011

M. Asif Khan
M. Asif Khan*
Affiliation:
[email protected], Univ. of South Carolina, Electrical Engineering, Rm 3A79, 301 Main St, Columbia, SC, 29208, United States
Get access

Abstract

In this paper we will describe the problems in growth and fabrication of deep UV LED devices and the approaches that we have used to grow AlGaN-based multiple quantum well deep UV LED structures and to overcome issues of doping efficiency, cracking, and slow growth rates both for the n- and the p-type layers of the device structures. Several innovations in structure growth, device structure design and fabrication and packaging have led to the fabrication of devices with emission from 250-300 nm and cw-milliwatt powers at pump currents of only 20 mA (Vf ≤ 6 V). Record wall plug efficiencies above 1.5 % are now achievable for devices with emission at 280 nm. Thermal management and a proper device design are not only key factors in achieving these record performance numbers but are also crucial to device reliability. We will also discuss some of our initial research to clarify the factors influencing the lifetime of the deep UV LEDs. In addition to our own work, we will review the results from the excellent research carried out at several other laboratories worldwide.

Keywords

metalorganic depositionnitrideoptoelectronic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF01-01
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Adivarahan, V., Zhang, J. P., Chitnis, A., Wu, S., Sun, J., Pachipulusu, R., Shatalov, M., and Asif Khan, M., Jpn. J. App. Phys. 41, L435 (2002).CrossRefGoogle Scholar
2. Zhang, J. P., Chitnis, A., Adivarahan, V., Wu, S., Mandavilli, V., Pachipulusu, R., Shatalov, M., Simin, G., Yang, J. W., and Asif Khan, M., Appl. Phys. Lett. 81, 4910 (2002).CrossRefGoogle Scholar
3. Fischer, A. J., Allerman, A. A., Crawford, M. H., Bogart, K. H. A., Lee, S. R., Kaplar, R. J., Chow, W. W., Kurtz, S. R., Fullmer, K. W., and Figiel, J. J., Appl. Phys. Lett. 84, 3394 (2004).CrossRefGoogle Scholar
4. Kim, K. H., Fan, Z. Y., Khizar, M., Nakarmi, M. L., Lin, J. Y., and Jiang, H. X., Appl. Phys. Lett. 85, 4777 (2004).CrossRefGoogle Scholar
5. Yasan, A., McClintock, R., Mayers, K., Darvish, S. R., Kung, P., and Razeghi, M., Appl. Phys. Lett. 81, 801 (2002).CrossRefGoogle Scholar
6. Kipshidze, G., Kuryatkov, V., Borisov, B., Nikishin, S., Holtz, M., Chu, S. N. G., and Temkin, H., Phys. Stat. Solidi a 192, 286 (2002).3.0.CO;2-2>CrossRef3.0.CO;2-2>Google Scholar
7. Hanlon, A., Pattison, P. M., Kaeding, J. F., Sharma, R., Fini, P., and Nakamura, S., Jpn. J. Appl. Phys. 42, L628 (2003).CrossRefGoogle Scholar
8. Moe, C. G., Masui, H., Schmidt, M. C., Shen, L., Moran, B., Newman, S., Vampola, K., Metes, T., Keller, S., Speck, J. S., DenBaars, S. P., Hussel, C., and Emerson, D., Jpn. J. Appl. Phys. 44, L502 (2005).CrossRefGoogle Scholar
9. Zhang, J. P., Asif Khan, M., Sun, W. H., Wang, H. M., Chen, C. Q., Fareed, Q., Kuokstis, E., and Yang, J. W., Appl. Phys. Lett. 81, 4392 (2002).CrossRefGoogle Scholar
10. Zhang, J. P., Wang, H. M., Gaevski, M. E., Chen, C. Q., Fareed, Q., Yang, J. W., Simin, G., and Asif, M. Khan, Appl. Phys. Lett. 80, 3542 (2002).CrossRefGoogle Scholar
11. Wang, H. M., Zhang, J. P., Chen, C. Q., Fareed, Q., Yang, J. W., and Khan, M. A., Appl. Phys. Lett. 81, 604 (2002).CrossRefGoogle Scholar
12. Shatalov, M., Simin, G., Zhang, J. P., Adivarahan, V., Koudymov, A., Pachipulusu, R., and Asif Khan, M., IEEE Electron. Dev. Lett. 23, 452 (2002).CrossRefGoogle Scholar
13. Wu, S., Adivarahan, V., Shatalov, M., Chitnis, A., Sun, W. H., and Asif Khan, M., Jpn. J. Appl. Phys. 43, L1035 (2004).CrossRefGoogle Scholar
14. Adivarahan, V., Sun, W. H., Chitnis, A., Shatalov, M., Wu, S., Maruska, H. P., and Asif Khan, M., Appl. Phys. Lett. 85, 2175 (2004).CrossRefGoogle Scholar
15. Adivarahan, V., Chitnis, A., Zhang, J. P., Shatalov, M., Yang, J. W., Simin, G., Asif Khan, M., Gaska, R., and Shur, M. S., Appl. Phys. Lett. 79, 4240 (2001).CrossRefGoogle Scholar
16. Chitnis, A., Adivarahan, V., Zhang, J., Shatalov, M., Wu, S., Yang, J., Simin, G., Asif Khan, M., Hu, X., Fareed, Q., Gaska, R., and Shur, M. S., Phys. Stat. Solidi (a) 200, 99 (2003).CrossRefGoogle Scholar
17. Sun, W. H., Zhang, J. P., Yang, J. W., Maruska, H. P., Asif Khan, M., Liu, R. and Ponce, F. A., Appl. Phys. Lett. 87, 211915 (2005).CrossRefGoogle Scholar
18. Sun, W. H., Adivarahan, V., Shatalov, M., Lee, Y. B., Wu, S., Yang, J. W., and Asif Khan, M., Jpn. J. Appl. Phys. 43, L1419 (2004).CrossRefGoogle Scholar
19. Zhang, J. P., Hu, X., Bilenko, Yu., Deng, J., Lunev, A., Shur, M. S., Gaska, R., Shatalov, M., Yang, J. W., and Khan, M. A., Appl. Phys. Lett. 85, 5532 (2004).CrossRefGoogle Scholar
20. Shatalov, M., Zhang, J. P., Chitnis, A., Adivarahan, V., Yang, J. W., Simin, G., and Asif Khan, M., IEEE Sel. Topics in Quant. Electron. 8, 302 (2002).CrossRefGoogle Scholar
21. Allerman, A. A., Crawford, M. H.. Fischer, A. J., Bogart, K. H. A., Lee, S. R., Follstaedt, D. M., Provencio, P.P., and Koleske, D. D., J. Cryst. Growth 272, 227 (2004).CrossRefGoogle Scholar
22. Jeon, C. W., Gu, E., and Dawson, M. D., Appl. Phys. Lett. 86, 221105 (2005).CrossRefGoogle Scholar
23. Shakya, J., Kim, K. H., Lin, J. Y., and Jiang, H. X., Appl. Phys. Lett. 85, 142 (2004).CrossRefGoogle Scholar
24. Chitnis, A., Adivarahan, V., Zhang, J. P., Wu, S., Sun, J., Pachipulusu, R., Mandavilli, V., Gaevski, M., Shatalov, M. and Asif Khan, M., Electron. Lett. 25, 1709 (2002).CrossRefGoogle Scholar
25. Chitnis, A., Jason, S., Mandavilli, V., Pachipulusu, R., Wu, S., Gaevski, M., Adivarahan, V., Zhang, J. P., Asif Khan, M., Sarua, A. and Kuball, M., Appl. Phys. Lett. 81, 3491 (2002).CrossRefGoogle Scholar
26. Yasan, A., McClintock, R., Mayes, K., Shiell, D., Gautero, L., Darvish, S. R., Kung, P., and Razeghi, M., Appl. Phys. Lett. 83, 4701 (2003).CrossRefGoogle Scholar
27. Adivarahan, V., Wu, S., Zhang, J. P., Chitnis, A., Shatalov, M., Mandavilli, V., Gaska, R. and Khan, M. A., Appl. Phys. Lett. 84, 4762 (2004).CrossRefGoogle Scholar
28. Bilenko, Yu., Lunev, A., Hu, X., Deng, J., Katona, T. M., Zhang, J. P., Gaska, R., Shur, M. S., Sun, W. H., Adivarahan, V., Shatalov, M. and Khan, M. A., Jpn. J. Appl. Phys. 44, L98 (2005).CrossRefGoogle Scholar
29. Nikishin, S. A., Holtz, M., and Temkin, H., Jpn. J. Appl. Phys. 44, 7221 (2005).CrossRefGoogle Scholar
30. Khan, M. A., Wu, S., Sun, W., Chitnis, A., Adivarahan, V., Shatalov, M. and Yang, J., IEEE Int. Electron Devices Meeting 2004 Tech. Digest (2004) 347.Google Scholar
31. Xi, Y., Xi, J.-Q., Gessmann, Th., Shah, J. M., Kim, J. K., Schubert, E. F., Fischer, A. J., Crawford, M. H., Bogart, K. H. A., and Allerman, A. A., Appl. Phys. Lett. 86, 031907 (2005).CrossRefGoogle Scholar
32. Shatalov, M., Chitnis, A., Yadav, P., Md.Hasan, F., Khan, J., Adivarahan, V., Maruska, H. P., Sun, W. H., Khan, M. A., Appl. Phys. Lett. 86, 201109 (2005).CrossRefGoogle Scholar
33. Khizar, M., Fan, Z. Y., Kim, K. H., Lin, J. Y., and Jiang, H. X., Appl. Phys. Lett. 86, 173504 (2005).CrossRefGoogle Scholar
34. Choi, H. W., Gu, E., Liu, C., Griffin, C., Girkin, J. M., Watson, I. M., and Dawson, M. D., J. Vac. Sci. Technol. B 23, 130 (2005)CrossRefGoogle Scholar
35. Peng, H., Makarona, E., He, Y., Song, Y.-K., Nurmikko, A. V., Su, J., Ren, Z., Gherasimova, M., Jeon, S.-R., Cui, G., and Han, J., Appl. Phys. Lett. 85, 1436 (2004).CrossRefGoogle Scholar
36. Han, J., Jeon, S.-R., Gherasimova, M., Su, J., Cui, G., Peng, H., Makarona, E., He, Y., Song, Y.-K., Nurmikko, A. V., Zhou, L., Goetz, W. K., and Krames, M. R., Proc. of SPIE 5530 61 (2004)CrossRefGoogle Scholar
37. Li, Q. Y., Dasgupta, P. K., Temkin, H., Crawford, M. H., Fischer, A. J., Allerman, A. A., Bogart, K. H. A., Lee, S. R., Appl. Spectroscopy 58 1360 (2004).CrossRefGoogle ScholarPubMed
38. Vita, P., Kurilčik, N., Juršėnas, S., Žukauskas, A., Lunev, A., Bilenko, Y., Zhang, J., Hu, X., Deng, J., Katona, T., and Gaska, R., Appl. Phys. Lett. 87, 084106 (2005).CrossRefGoogle Scholar
39. McGuinness, C. D., Sagoo, K., McLoskey, D., and Birch, D. J. S., Appl. Phys. Lett. 86, 261911 (2005).CrossRefGoogle Scholar
40. Shaw, G. A., Siegel, A. M., Model, J., Greisokh, D., Proc. SPIE 5796, 214 (2005).CrossRefGoogle Scholar
41. http://www.compoundsemiconductor.net/articles/news/9/3/18/1 Google Scholar
42. http://www.compoundsemiconductor.net/articles/news/9/4/2/1 Google Scholar