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Deep Levels Induced by SiCI4 Reactive Ion Etching in GaAs

Published online by Cambridge University Press:  22 February 2011

N.P. Johnson ,
M. A. Foad ,
S. Murad ,
M. C. Holland  and
C. D. W. Wilkinson
N.P. Johnson
Affiliation:
Department of Electronics and Electrical Engineering, The University, Glasgow G12 8QQ, UK
M. A. Foad
Affiliation:
Department of Electronic and Electrical Engineering, University of Salford, Salford M5 4WT, UK
S. Murad
Affiliation:
Department of Electronics and Electrical Engineering, The University, Glasgow G12 8QQ, UK
M. C. Holland
Affiliation:
Department of Electronics and Electrical Engineering, The University, Glasgow G12 8QQ, UK
C. D. W. Wilkinson
Affiliation:
Department of Electronics and Electrical Engineering, The University, Glasgow G12 8QQ, UK
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Abstract

Deep Level Transient Spectroscopy (DLTS) is used to investigate the effect of SiC14 Reactive Ion Etching (RIE) on GaAs. At high power (150-80 W) with high DC self bias (380-240 V), five deep levels trapping electrons are observed at energies of 0.30, 0.42, 0.64, 0.86 and ∼0.8 eV below the conduction band edge. Depth profiling reveals an approximate exponential decay of the concentration of the deep levels. At low power the induced concentration falls, the small concentration of remaining deep levels is close to control (no etching) samples. The induced deep levels can account for reduced conductances in n+GaAs wires defined by RIE under similar experimental conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 325: Symposium L – Physics and Applications of Defects in Advanced Semiconductors , 1993 , 443
Copyright
Copyright © Materials Research Society 1994

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