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Deep Levels and Compensation in High Purity Semi-Insulating 4H-SiC

Published online by Cambridge University Press:  01 February 2011

William C Mitchel ,
W. D. Mitchell ,
H. E. Smith ,
W. E. Carlos  and
E. R. Glaser
William C Mitchel
Affiliation:
[email protected], Air Force Research Laboratory, AFRL/MLPS, Bldg. 651, 2005 Hobson Way, Wright Patterson AFB, OH, 45433-7707, United States, 937 255 9891, 937 255 4913
W. D. Mitchell
Affiliation:
[email protected], Air Force Research Laboratory, AFRL/MLPS, Wright Patterson AFB, OH, 45433-7707, United States
H. E. Smith
Affiliation:
[email protected], Air Force Research Laboratory, AFRL/MLPS, Wright Patterson AFB, OH, 45433-7707, United States
W. E. Carlos
Affiliation:
[email protected], Naval Research Laboratory, Washington, DC, 20375, United States
E. R. Glaser
Affiliation:
[email protected], Naval Research Laboratory, Washington, DC, 20375, United States
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Abstract

A study of temperature dependent Hall effect (TDH), electron paramagnetic resonance (EPR), photoluminescence (PL) and secondary ion mass spectrometry (SIMS) measurements has been made on high purity semi-insulating (HPSI) 4H-SiC crystals grown by the physical vapor transport technique. Thermal activation energies from TDH varied from a low of 0.55 eV to a high of 1.5 eV. All samples studied showed n-type conduction with the Fermi level in the upper half of the band gap. Carrier concentration measurements indicated the deep levels had to be present in concentrations in the low 1015 cm-3 range. Several defects were detected by EPR including the carbon vacancy and the carbon-silicon divacancy. PL measurements in the near IR showed the presence of the UD-1, UD-2 and UD-3 emission lines that have been found in HPSI material. No correlation between the relative intensities of the PL lines and the TDH activation energies was seen. SIMS measurements on nitrogen, boron and other common impurities indicate nitrogen and boron concentrations higher than those of individual deep levels as determined by TDH or of intrinsic defects as determined by EPR such as the carbon vacancy or the divacancy. It is determined that several different defects with concentrations greater than or equal to 1x1015 cm-3 are required to compensate the residual nitrogen and boron.

Keywords

Hall effectelectron spin resonancedefects
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 911: Symposium B – Silicon Carbide 2006 – Materials, Processing and Devices , 2006 , 0911-B06-02
Copyright
Copyright © Materials Research Society 2006

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